Stark effect in MoSe2 monolayer heterostructure
- Authors: Chernenko A.V.1, Brichkin A.S.1, Golyshkov G.M.1
-
Affiliations:
- Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
- Issue: Vol 88, No 2 (2024)
- Pages: 241-246
- Section: New Materials and Technologies for Security Systems
- URL: https://journals.rcsi.science/0367-6765/article/view/266112
- DOI: https://doi.org/10.31857/S0367676524020132
- EDN: https://elibrary.ru/RRLNPU
- ID: 266112
Cite item
Abstract
The effect of a vertical electric field on photoluminescence of a MoSe2 monolayer encapsulated with hexagonal boron nitride is investigated. In the spectra, there is a quadratic shift of the photoluminescence lines of excitons and trions from the applied potential difference, as well as a change in their intensity. It is found that the magnitude of the Stark shift significantly exceeds the theoretically predicted one. It is found that the energy distance between the trion and exciton lines in the spectra varies with the magnitude of the external field, which is due to the dependence of the density of free charge carriers in the monolayer on the field. This effect made it possible to determine the density of free charge carriers in the monolayer, which varies with the field and lies in the range from 0.3–3.4⋅1012 cm–2.
Full Text

About the authors
A. V. Chernenko
Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
Author for correspondence.
Email: chernen@issp.ac.ru
Russian Federation, Chernogolovka
A. S. Brichkin
Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
Email: chernen@issp.ac.ru
Russian Federation, Chernogolovka
G. M. Golyshkov
Osipyan Institute of Solid-State Physics of the Russian Academy of Sciences
Email: chernen@issp.ac.ru
Russian Federation, Chernogolovka
References
- Ross J.S., Wu S., Wu H. et al. // Nature Commun. 2013. V. 4. P. 1474.
- Roch J.G., Leisgang N., Froehlicher G. et al. // Nano Lett. 2018. V. 18. P. 1070.
- Klein J., Wierzbowsk J., Regler A. et al. // Nano Lett. 2018. V. 18. P. 1070.
- Abraham N., Watanabe K., Taniguchi T., Majumdar K. // Phys. Rev. B. 2021. V. 103. No. 7. Art. No. 075430.
- Бричкин А.С., Голышков Г.М., Черненко А.В. // ЖЭТФ. 2023. Т. 163. P. 852; Brichkin A.S., Golyshkov G.M., Chernenko A.V. // JETP. 2023. V. 136. P. 760.
- Miller D.A.B., Chemla D.S., Damen T.C. et al. // Phys. Rev. B. 1985. V. 32. P. 1043.
- Pederson T.G. // Phys. Rev. B. 2016. V. 94. Art. No. 125424.
- Laturia A.M., Van de Put M., Vandenberghe W. et al. // NPJ2D Mater. Appl. 2018. V. 2. Art. No. 6.
- Chernikov A., van der Zande M.A., Hill H.M. et al. // Phys. Rev. Lett. 2015. V. 115. No. 2. Art. No. 126802.
- Sup Choi M., Lee G.H., Yu Y.J. et al. // Nature Commun. 2013. V. 4. P. 1624.
- Wang H., Wu Y., Cong C. et al. // ASC Nano. 2010. V. 4. P. 7221.
- Epping A., Banszerus L., Guettinger J. // J. Phys. Cond. Matter. 2018. V. 30. Art. No. 205001.
- Ju L., Velasco J., Huang E. et al. // Nature Nanotechnol. 2014. V. 9. P. 348.
- Lochmann T., von Klitzing K., Smet J.H. // Nano Lett. 2009. V. 9. P. 1973.
Supplementary files
