Terahertz radiation sources based on AlGaAs/GaAs superlattices

封面

如何引用文章

全文:

开放存取 开放存取
受限制的访问 ##reader.subscriptionAccessGranted##
受限制的访问 订阅存取

详细

We proposed several types of design of terahertz emitters based on the perfect AlGaAs/GaAs superlattices obtained by molecular-beam epitaxy. Transition energies, gain, and losses are calculated for the developed structures, which determined the design of the created experimental structures.

作者简介

A. Dashkov

Saint Petersburg National Research Academic University of the Russian Academy of Sciences; St. Petersburg Electrotechnical University

编辑信件的主要联系方式.
Email: Dashkov.Alexander.OM@gmail.com
Russia, 194021, St. Petersburg; Russia, 197376, St. Petersburg

L. Gerchikov

Saint Petersburg National Research Academic University of the Russian Academy of Sciences; St. Petersburg Electrotechnical University

Email: Dashkov.Alexander.OM@gmail.com
Russia, 194021, St. Petersburg; Russia, 197376, St. Petersburg

L. Goray

Saint Petersburg National Research Academic University of the Russian Academy of Sciences; St. Petersburg Electrotechnical University; Institute for Analytical Instrumentation of the Russian Academy of Sciences; University associated with IE EAEC

Email: Dashkov.Alexander.OM@gmail.com
Russia, 194021, St. Petersburg; Russia, 197376, St. Petersburg; Russia, 190103, St. Petersburg; Russia, 199106, St. Petersburg

N. Kharin

Peter the Great St. Petersburg Polytechnic University

Email: Dashkov.Alexander.OM@gmail.com
Russia, 195251, St. Petersburg

M. Sobolev

Saint Petersburg National Research Academic University of the Russian Academy of Sciences; St. Petersburg Electrotechnical University

Email: Dashkov.Alexander.OM@gmail.com
Russia, 194021, St. Petersburg; Russia, 197376, St. Petersburg

R. Khabibullin

Mokerov Institute of Ultra-high Frequency Semiconductor Electronics of the Russian Academy of Sciences

Email: Dashkov.Alexander.OM@gmail.com
Russia, 117105, Moscow

A. Bouravleuv

St. Petersburg Electrotechnical University; Institute for Analytical Instrumentation of the Russian Academy of Sciences; University associated with IE EAEC

Email: Dashkov.Alexander.OM@gmail.com
Russia, 197376, St. Petersburg; Russia, 190103, St. Petersburg; Russia, 199106, St. Petersburg

参考

  1. Казаринов Р.Ф., Сурис Р.А. // ФТП. 1971. Т. 5. № 4. С. 797.
  2. Esaki L., Tsu R. // IBM J. Res. Dev. 1970. V. 14. No. 1. P. 61.
  3. Bosco L., Franckie M., Scalari G. et al. // Appl. Phys. Lett. 2019. V. 115. Art. No. 010601.
  4. Leyman R., Bazieva N., Kruczek T. et al. // Recent Pat. Signal Process. 2012. V. 2. Art. No. 12.
  5. Mattsson M.O., Simkó M. // Med. Devices (Auckland, NZ). 2019. V. 12. P. 347.
  6. Banerjee A., Vajandar S., Basu T. Terahertz biomedical and healthcare technologies. Amsterdam: Elsevier, 2020. p. 225.
  7. Federici J.F., Schulkin B., Huang F. et al. // Semicond. Sci. Technol. 2005. V. 20. No. 7. Art. No. S266.
  8. Knipper R., Brahm A., Heinz E. et al. // IEEE Trans. Terahertz Sci. Technol. 2015. V. 5. No. 6. P. 999.
  9. Piesiewicz R., Jacob M., Koch M. et al. // IEEE J. Sel. Top. Quantum Electron. 2008. V. 14. No. 2. P. 421.
  10. Niu Z., Zhang B., Wang J. et al. // China Commun. 2020. V. 17. No. 3. P.131.
  11. Khalatpour A., Paulsen A.K., Deimert C. et al. // Nature. Photon. 2021. V. 15. No. 1. P. 16.
  12. Lu Q., Razeghi M. // Photonics. 2016. V. 3. No. 3. P. 42.
  13. Vitiello M.S., Tredicucci A. // Adv. Phys.-X. 2021. V. 6. No. 1. Art. No. 1893809.
  14. Köhler R., Tredicucci A., Beltram F. et al. // Nature. 2002. V. 417. No. 6885. P. 156.
  15. Wannier G.H. // Phys. Rev. 1960. V. 117. No. 2. P. 432.
  16. Алтухов И.В., Дижур С.Е., Каган М.С. и др. // Письма в ЖЭТФ. 2016. Т. 103. № 2. С. 128; Altukhov I.V., Dizhur S.E., Kagan M.S. et al. // JETP Lett. 2016. V. 103. No. 2. P. 122.
  17. Kagan M.S., Altukhov I.V., Paprotskiy S.K. et al. // Lith. J. Phys. 2014. V. 54. No. 1. P. 50.
  18. Андронов А.А., Додин Е.П., Зинченко Д.И. и др. // Письма в ЖЭТФ. 2015. Т. 102. № 4. С. 235; Andronov A.A., Dodin E.P., Zinchenko D.I. et al. // JETP Lett. 2015. V. 102. No. 4. P. 207.
  19. Andronov A.A., Ikonnikov A.V., Maremianin K.V. et al. // ФTП. 2018. T. 52. № 4. C. 463; Andronov A.A., Ikonnikov A.V., Maremianin K.V. et al. // Semiconductors. 2018. V. 52. No. 4. P. 431.
  20. Андронов А.А., Додин Е.П., Зинченко Д.И. и др. // Квант. электрон. 2010. Т. 40. № 5. С. 400; Andro-nov A.A., Dodin E.P., Zinchenko D.I. et al. // Quantum Electron. 2010. V. 40. No. 5. P. 400.
  21. Jirauschek C. // IEEE J. Quantum Electron. 2009. V. 45. No. 9. P. 1059.
  22. Kane E.O. Handbook on semiconductors. Amsterdam: Elsevier. 1982. P. 193.
  23. Vurgaftman I., Meyer J.R., Ram-Mohan L.R. // J. Appl. Phys. 2001. V. 89. No. 11. P. 5815.
  24. Williams B.S. // Nature Photonics. 2007. V. 1. No. 9. P. 517.
  25. Kohen S., Williams B.S., Hu Q. // J. Appl. Phys. 2005. V. 97. No. 5. Art. No. 053106.
  26. Dashkov A.S., Goray L.I. // J. Phys. Conf. Ser. 2019. V. 1410. Art. No. 012085.
  27. Jirauschek C., Kubis T. // Appl. Phys. Rev. 2014. V. 1. No. 1. Art. No. 011307.
  28. Dashkov A.S., Goray L.I. // Semiconductors. 2020. V. 54. No. 14. P. 1823.
  29. Sirtori C., Capasso F., Faist J., Scandolo S. // Phys. Rev. B. 1994. V. 50. No. 12. P. 8663.
  30. Горай Л.И., Пирогов Е.В., Соболев М.С. и др. // ЖТФ. 2020. Т. 90. № 11. С. 1906; Goray L.I., Pirogov E.V., Sobolev M.S. et al. // Tech. Phys. 2020. V. 65. No. 11. P.1822.
  31. Горай Л.И., Пирогов Е.В., Свечников М.В. и др. // Письма в ЖТФ. 2021. Т. 47. № 15. С. 7; Goray L.I., Pirogov E.V., Svechnikov M.V. et al. // Tech. Phys. Lett. 2021. V. 47. No. 10. P. 757.
  32. Goray L.I., Pirogov E.V., Nikitina E.V. et al. // Semiconductors. 2019. V. 53. No. 14. P. 1914.
  33. Goray L.I., Pirogov E.V., Sobolev M.S. et al. // J. Physics D. 2020. V. 53. No. 45. Art. No. 455103.
  34. Goray L.I., Pirogov E.V., Sobolev M.S. et al. // Semiconductors. 2019. V. 53. No. 14. P. 1910.
  35. Beere H.E., Fowler J.C., Alton J. et al. // J. Cryst. Growth. 2005. V. 278. No. 1. P. 756.
  36. Герчиков Л.Г., Дашков А.С., Горай Л.И., Буравлев А.Д. // ЖЭТФ. 2021. Т. 160. № 2. С. 197; Gerchikov L.G., Dashkov A.S., Goray L.I., Bouravleuv A.D. // JETP. 2021. V. 133. No. 2. P. 161.

补充文件

附件文件
动作
1. JATS XML
下载
2.

下载 (111KB)
索引源数据
3.

下载 (177KB)
索引源数据
4.

下载 (63KB)
索引源数据

版权所有 © А.С. Дашков, Л.Г. Герчиков, Л.И. Горай, Н.Ю. Харин, М.С. Соболев, Р.А. Хабибуллин, А.Д. Буравлев, 2023

##common.cookie##