On a shape of band-to-acceptor luminescence line in semiconductors

I. A. Kokurin; Кокурин И. А.; N. S. Averkiev; Аверкиев Н. С.

doi:10.31857/S0367676523701478

On a shape of band-to-acceptor luminescence line in semiconductors

Авторлар: Kokurin I.¹^,2, Averkiev N.¹
Мекемелер:
1. Ioffe Physical-Technical Institute of the Russian Academy of Sciences
2. National Research Ogarev Mordovia State University
Шығарылым: Том 87, № 6 (2023)
Беттер: 849-854
Бөлім: Articles
URL: https://journals.rcsi.science/0367-6765/article/view/135408
DOI: https://doi.org/10.31857/S0367676523701478
EDN: https://elibrary.ru/VLVYLH
ID: 135408

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Аннотация
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Аннотация

A theoretical explanation is proposed for the shape of the long-wavelength edge of the luminescence line, which is caused by the recombination of a free electron and a hole of a neutral acceptor. The formation of complexes, in which a single hole is localized by the field of two attracting ions (\(A_{2}^{ - }\) complexes) and the subsequent recombination of holes in such complexes with electrons of the conduction band are considered. The Coulomb repulsion in the final state after recombination and the dispersion of the complexes in terms of the interionic distance provide an extended long-wavelength tail of the luminescence line, comparable in magnitude to the ionization energy of a single acceptor.

Авторлар туралы

I. Kokurin

Ioffe Physical-Technical Institute of the Russian Academy of Sciences; National Research Ogarev Mordovia State University

Хат алмасуға жауапты Автор.
Email: ivan.a.kokurin@gmail.com
Russia, 194021, St. Petersburg,; Russia, 430005, Saransk

N. Averkiev

Ioffe Physical-Technical Institute of the Russian Academy of Sciences

Email: ivan.a.kokurin@gmail.com
Russia, 194021, St. Petersburg,

Әдебиет тізімі

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