Fragmentary Model of the Atomic Structure of the Ion-Conducting Semiconductor Glass AgGeAsSe3

K. B. Aleinikova; Алейникова К. Б.; E. N. Zinchenko; Зинченко Е. Н.; N. V. Melnikova; Мельникова Н. В.

doi:10.31857/S0132665123600267

Fragmentary Model of the Atomic Structure of the Ion-Conducting Semiconductor Glass AgGeAsSe3

Authors: Aleinikova K.B.¹, Zinchenko E.N.¹, Melnikova N.V.²
Affiliations:
1. Voronezh State University, 394018, Voronezh, Russia
2. Institute of Natural Sciences and Mathematics, Ural Federal University, 620002, Yekaterinburg, Russia
Issue: Vol 49, No 5 (2023)
Pages: 499-511
Section: Articles
URL: https://journals.rcsi.science/0132-6651/article/view/139330
DOI: https://doi.org/10.31857/S0132665123600267
EDN: https://elibrary.ru/YBVGBH
ID: 139330

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Abstract

The atomic radial distribution function of vitreous AgGeAsSe3, obtained based on the experimental intensity curves taken with monochromatic copper and molybdenum radiation, is interpreted using a fragmentary model in the entire ordering region (~9 Å). It is shown that the glass consists of selenium and selenium-arsenic tetrahedra with germanium and silver atoms inside. The spatial arrangement of such tetrahedra in glass within the ordering region is similar to their arrangement in the GeAsSe and GeSe2 structures. It is proposed that the “openwork” structure of the fragments of these structures allows the movement of Ag+ ions (ionic conductivity) in vitreous AgGeAsSe3. Fragments of the structure of the ion-conducting compound Ag2Se are not found in the studied glass.

Keywords

atomic structure of glasses, atomic radial distribution function, fragmentary model, ion-conducting semiconductor glass

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