ATOMIC LAYER DEPOSITION OF ALUMINUM-MOLYBDENUM OXIDE FILMS USING TRIMETHYLALUMINUM AND MOLYBDENUM DICHLORIDE DIOXIDE

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Abstract

An atomic layer deposition (ALD) of aluminum-molybdenum oxide (Al,Mo,O) films, based on cyclic reactions of trimethylaluminum (TMA) and molybdenum dichloride dioxide (MoO2Cl2) vapors, is presented. The effect of adding a water vapor dose into the ALD cycle (TMA-H2O-MoO2Cl2) was investigated. The film growth process was studied in situ using a quartz crystal microbalance (QCM). It was established that at a deposition temperature of 180°C, both the TMA-MoO2Cl2 and TMA-H2O-MoO2Cl2 processes exhibit linear growth with growth per cycle (GPC) values of 3.79 Å/cycle and 3.94 Å/cycle, respectively. According to X-ray reflectivity (XRR) and X-ray diffraction (XRD) data, the resulting films had an amorphous structure with a density of ∼3.7 g/cm3 and a root mean square (RMS) roughness in the range of 10-12 Å. Both types of films had a similar composition. The films contained Mo6+, Mo5+, and Mo4+ species.

About the authors

A. M Maksumova

Dagestan State University; Institute for Geothermal Research and Renewable Energy of the Joint Institute for High Temperatures of the Russian Academy of Sciences

Email: ilmutdina@gmail.com
Makhachkala, Russia; Makhachkala, Russia

I. S Bodalev

St. Petersburg State Technological Institute (Technical University)

St. Petersburg, Russia

S. S Etmisheva

Dagestan State University

Makhachkala, Russia

A. V Koroleva

St. Petersburg State University

St. Petersburg, Russia

M. G Shtancheva

Dagestan State University

Makhachkala, Russia

I. M Abdulagatov

Dagestan State University

Makhachkala, Russia

M. Kh Rabadanov

Dagestan State University

Makhachkala, Russia

A. S Loginova

PROTON Plant

Zelenograd, Moscow, Russia

B. A Loginov

National Research University “Moscow Institute of Electronic Technology”

Moscow, Russia

A. I Abdulagatov

Dagestan State University

Makhachkala, Russia

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