Phase formation and optical properties of vanadium-doped aluminum oxynitride

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Abstract

The phase formation, morphology, and optical properties of aluminum oxynitride (Al5O6N) doped with vanadium ions were studied in the concentration range of 0.01–5.0 at. % (relative to aluminum). All samples were obtained by calcining mixtures of Al2O3, AlN, and V2O5 at a temperature of 1750°C in a nitrogen flow. The resulting materials were predominantly single-phase γ-AlON with minor impurities of aluminum nitride, as well as VC, VN, VO, or their solid solutions, for vanadium concentrations of ≥0.1 at. %. In AlON:V, the band gap (Eg) ranges from 5.82 to 5.94 eV, depending on the vanadium concentration. The luminescence of AlON:V is attributed to intrinsic defects and impurity luminescence centers. The presence of vanadium in AlON results in an increase in the optical absorption and a decrease in the intensity of intrinsic luminescence, which is caused by the formation of vanadium-containing impurity phases.

About the authors

A. V. Ishchenko

Ural Federal University named after the first President of Russia B.N. Yeltsin

Email: a-v-i@mail.ru
Mira str., 19, Yekaterinburg, 620002 Russia

N. S. Akhmadullina

Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences

Email: a-v-i@mail.ru
Leninsky Prospekt, 49, Moscow, 119334 Russia

I. I. Leonidov

Institute of Solid State Chemistry, Ural Branch, Russian Academy of Sciences

Email: a-v-i@mail.ru
Pervomaiskaya str., 91, Yekaterinburg, 620077 Russia

V. P. Sirotinkin

Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences

Email: a-v-i@mail.ru
Leninsky Prospekt, 49, Moscow, 119334 Russia

I. A. Weinstein

Ural Federal University named after the first President of Russia B.N. Yeltsin; Institute of Metallurgy, Ural Branch, Russian Academy of Sciences

Email: a-v-i@mail.ru
Mira str., 19, Yekaterinburg, 620002 Russia; Amundsen str., 101, Yekaterinburg, 620016 Russia

Yu. F. Kargin

Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences

Author for correspondence.
Email: a-v-i@mail.ru
Leninsky Prospekt, 49, Moscow, 119334 Russia

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