Effect of the photonic band gap position on the photocatalytic activity of anodic titanium oxide photonic crystal

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Abstract

The slowing down of the group velocity of light at the edges of the photonic band gap is one of the important optical effects observed in photonic crystals. In particular, the “slow light” effect is used in photocatalysis to increase the photocatalytic activity of semiconductors. In this work, anatase photonic crystals with different spectral positions of the photonic band gap (390–1283 nm, measured in water) were obtained. It is shown that if one of the photonic band gaps is located near the absorption edge of the semiconductor (410 nm), photonic crystal exhibits high photocatalytic activity in the photodegradation of methylene blue. At the same time, the photocatalytic activity of anatase photonic crystal increases by 30% when the photonic band gap of the third order rather than the first order is located near the absorption edge of the semiconductor.

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About the authors

M. A. Belokozenko

Lomonosov Moscow State University

Email: nina@elch.chem.msu.ru
Russian Federation, Moscow 119991

N. A. Sapoletova

Lomonosov Moscow State University

Author for correspondence.
Email: nina@elch.chem.msu.ru
Russian Federation, Moscow 119991

S. E. Kushnir

Lomonosov Moscow State University

Email: nina@elch.chem.msu.ru
Russian Federation, Moscow 119991

K. S. Napolskii

Lomonosov Moscow State University

Email: nina@elch.chem.msu.ru
Russian Federation, Moscow 119991

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Supplementary files

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2. Fig. 1. Dependences of the applied voltage (U) and the recorded current density (j) on the charge density (a) and anodization time (b) during the synthesis of the S857 sample.

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3. Fig. 2. X-ray diffraction pattern of an annealed sample S1065 on a titanium substrate. The lower part of the figure shows the positions and relative intensities of the titanium [44–1294] and anatase [21–1272] reflections from the ICDD PDF2 database.

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4. Fig. 3. Transmission spectrum of an annealed NT sample (a) and the same, reconstructed in Tauc coordinates for an indirect gap semiconductor (b).

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5. Fig. 4. SEM images of the upper surface (a), transverse cleavage (b) and lower surface (c) of the annealed sample S857. Solid and dotted arrows indicate parts of the AOT film formed at an alternating voltage of 50–70 V and a constant voltage of 50 V, respectively.

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6. Fig. 5. Total reflection spectra of annealed AOT-based PCs with pores filled with water. Above the reflection maxima corresponding to the FZZ, the codes of the PC samples are indicated.

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7. Fig. 6. Kinetic curves of the photodecomposition of methylene blue under the influence of UV radiation (365 nm) in the presence of annealed PCs based on AOT with different PBG positions (390–1283 nm), as well as an annealed NT sample obtained at a constant voltage of 60 V. As a blank The sample was aluminum foil.

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8. Fig. 7. Dependence of the reaction rate constant (k) of the photodecomposition of methylene blue on the position of the maximum of the photocatalyst's photocatalyst when exposed to UV radiation (365 nm). Filled and unfilled figures indicate the position of the first- and third-order FZZ, respectively. The horizontal dotted line indicates the k value calculated for the NT sample obtained at a constant voltage of 60 V. The vertical dotted line indicates the experimental value of the anatase band gap (Eg = 3.02 eV, which is equivalent to a wavelength of 410 nm).

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