FABRICATION AND STUDY OF THE p − Si/α − Si/Ag MEMRISTOR CROSSBAR ARRAY

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Abstract

We study the formation of the conductive channels in α-Si memristors and demonstrate their operation in the crossbar array. The latter can be utilised as the basic component of the neuromorphic chip tailored for edge computing. The conductive channels in α-Si are formed by the migration of Ag along with Cu ions. Such a channel has switching current-voltage characteristics at high bias, Vbias > 2V, and highly non-linear that at low bias, Vbias < 0.5V. Memristor can be re-programmed to different resistance states with short voltage pulses of amplitude above 2 V. We demonstrate the programming of the memristor crossbar array and its operation in vector-by-matrix multiplication with an 87% accuracy.

About the authors

A. Samsonova

Skolkovo Institute of Science and Technology

Email: alena.samsonova@skoltech.ru
Moscow, Russia

S. Yegiyan

Skolkovo Institute of Science and Technology

Email: alena.samsonova@skoltech.ru
Moscow, Russia

O. Klimenko

Skolkovo Institute of Science and Technology; P.N. Lebedev Physical Institute of the Russian Academy of Siences

Email: alena.samsonova@skoltech.ru
Moscow, Russia; Moscow, Russia

V. N. Antonov

Skolkovo Institute of Science and Technology

Email: alena.samsonova@skoltech.ru
Moscow, Russia

G. Paradezhenko

Skolkovo Institute of Science and Technology

Email: alena.samsonova@skoltech.ru
Moscow, Russia

D. Prodan

Skolkovo Institute of Science and Technology

Email: alena.samsonova@skoltech.ru
Moscow, Russia

A. Pervishko

Skolkovo Institute of Science and Technology

Email: alena.samsonova@skoltech.ru
Moscow, Russia

D. Yudin

Skolkovo Institute of Science and Technology

Email: alena.samsonova@skoltech.ru
Moscow, Russia

N. Brilliantov

Skolkovo Institute of Science and Technology

Author for correspondence.
Email: alena.samsonova@skoltech.ru
Moscow, Russia

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