ZAKhVAT ELEKTRONOV I DYROK NA SOSTOYaNIYa VAKANSIY RTUTI S ISPUSKANIEM ODINOChNOGO OPTIChESKOGO FONONA PRI REKOMBINATsII ShOKLI– RIDA–KhOLLA V UZKOZONNYKh TVERDYKh RASTVORAKh HgCdTe
- Authors: Kozlov D.V.1, Rumyantsev V.V.1, Yantser A.A.1, Morozov S.V.1, Gavrilenko V.I.1
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Affiliations:
- Issue: Vol 165, No 6 (2024)
- Pages: 840-847
- Section: Articles
- URL: https://journals.rcsi.science/0044-4510/article/view/259045
- DOI: https://doi.org/10.31857/S0044451024060117
- ID: 259045
Cite item
Abstract
Расчитано время рекомбинации Шокли – Рида – Холла (ШРХ) при захвате носителей заряда на состояния вакансии ртути в твердых растворах HgCdTe с шириной запрещенной зоны около 40 мэВ. В рассматривемом случае захват как электрона, так и дырки возможен за счет испускания одного оптического фонона. Установлено, что при T = 4.2 и 77 К рекомбинация ШРХ определяет общее время жизни носителей в материале p-типа при концентрации центров рекомбинации более 2・1015 см−3, что позволяет управлять временем жизни носителей за счет изменения концентрации вакансий ртути.
About the authors
D. V. Kozlov
V. V. Rumyantsev
A. A. Yantser
Email: yantser@ipmras.ru
S. V. Morozov
V. I. Gavrilenko
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