Methods for High-Purity Aluminum Oxide Production for Growth of Leucosapphire Crystals (Review)
- Autores: Panasyuk G.P.1, Azarova L.A.1, Belan V.N.1, Semenov E.A.1, Danchevskaya M.N.1, Voroshilov I.L.1, Kozerozhets I.V.1, Pershikov S.A.1, Kharatyan S.Y.1
- 
							Afiliações: 
							- Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
 
- Edição: Volume 53, Nº 4 (2019)
- Páginas: 596-601
- Seção: Technology of Inorganic Substances and Materials
- URL: https://journals.rcsi.science/0040-5795/article/view/173025
- DOI: https://doi.org/10.1134/S0040579518050196
- ID: 173025
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Resumo
Methods for the preparation of raw materials to produce leucosapphire are considered. It is shown that the main directions in the production of high-purity aluminum oxide raw materials are: electrochemical oxidation of aluminum, decomposition of alkoxides, high-temperature treatment of aluminum oxide in a halogen-containing atmosphere, and preliminary purification of aluminum-containing compounds followed by their decomposition. It is shown that methods of the purification of aluminum hydroxide and oxide obtained by the Bayer process are the most promising for industrial use. These methods include the complex purification and simultaneous preparation of ceramic preforms starting from aluminum hydroxides or oxides by their treatment in subcritical or supercritical steam and the following heat treatment in a halogen-containing medium.
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Sobre autores
G. Panasyuk
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
							Autor responsável pela correspondência
							Email: panasyuk@igic.ras.ru
				                					                																			                												                	Rússia, 							Moscow, 119991						
L. Azarova
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
														Email: panasyuk@igic.ras.ru
				                					                																			                												                	Rússia, 							Moscow, 119991						
V. Belan
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
														Email: panasyuk@igic.ras.ru
				                					                																			                												                	Rússia, 							Moscow, 119991						
E. Semenov
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
														Email: panasyuk@igic.ras.ru
				                					                																			                												                	Rússia, 							Moscow, 119991						
M. Danchevskaya
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
														Email: panasyuk@igic.ras.ru
				                					                																			                												                	Rússia, 							Moscow, 119991						
I. Voroshilov
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
														Email: panasyuk@igic.ras.ru
				                					                																			                												                	Rússia, 							Moscow, 119991						
I. Kozerozhets
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
														Email: panasyuk@igic.ras.ru
				                					                																			                												                	Rússia, 							Moscow, 119991						
S. Pershikov
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
														Email: panasyuk@igic.ras.ru
				                					                																			                												                	Rússia, 							Moscow, 119991						
S. Kharatyan
Kurnakov Institute of General and Inorganic Chemistry, Russian Academy of Sciences
														Email: panasyuk@igic.ras.ru
				                					                																			                												                	Rússia, 							Moscow, 119991						
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