Enviar artigo por via de e-mail Formation of an Electrode Deposit under Galvanostatic Conditions
- Autores: Isaev V.A.1, Grishenkova O.V.1, Laptev M.V.1, Isakov A.V.1, Zaikov Y.P.1
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Afiliações:
- Institute of High-Temperature Electrochemistry, Ural Branch, Russian Academy of Sciences
- Edição: Volume 2018, Nº 8 (2018)
- Páginas: 763-766
- Seção: Article
- URL: https://journals.rcsi.science/0036-0295/article/view/172065
- DOI: https://doi.org/10.1134/S0036029518080086
- ID: 172065
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Resumo
The laws of formation of a continuous deposit layer at a given direct current are considered. Equations are analyzed to calculate the time dependences of overpotential for instantaneous nucleation with kinetic or diffusion control of new-phase growth. The calculated dependences are compared with the experimental ones obtained for silicon electrodeposition from a fluoride–chloride melt.
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Sobre autores
V. Isaev
Institute of High-Temperature Electrochemistry, Ural Branch, Russian Academy of Sciences
Autor responsável pela correspondência
Email: v.isaev@ihte.uran.ru
Rússia, Yekaterinburg, 620137
O. Grishenkova
Institute of High-Temperature Electrochemistry, Ural Branch, Russian Academy of Sciences
Email: v.isaev@ihte.uran.ru
Rússia, Yekaterinburg, 620137
M. Laptev
Institute of High-Temperature Electrochemistry, Ural Branch, Russian Academy of Sciences
Email: v.isaev@ihte.uran.ru
Rússia, Yekaterinburg, 620137
A. Isakov
Institute of High-Temperature Electrochemistry, Ural Branch, Russian Academy of Sciences
Email: v.isaev@ihte.uran.ru
Rússia, Yekaterinburg, 620137
Yu. Zaikov
Institute of High-Temperature Electrochemistry, Ural Branch, Russian Academy of Sciences
Email: v.isaev@ihte.uran.ru
Rússia, Yekaterinburg, 620137
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