Formation of an Electrode Deposit under Galvanostatic Conditions

V. A. Isaev; O. V. Grishenkova; M. V. Laptev; A. V. Isakov; Yu. P. Zaikov

doi:10.1134/S0036029518080086

Formation of an Electrode Deposit under Galvanostatic Conditions

Авторы: Isaev V.¹, Grishenkova O.¹, Laptev M.¹, Isakov A.¹, Zaikov Y.¹
Учреждения:
1. Institute of High-Temperature Electrochemistry, Ural Branch, Russian Academy of Sciences
Выпуск: Том 2018, № 8 (2018)
Страницы: 763-766
Раздел: Article
URL: https://journals.rcsi.science/0036-0295/article/view/172065
DOI: https://doi.org/10.1134/S0036029518080086
ID: 172065

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Аннотация

The laws of formation of a continuous deposit layer at a given direct current are considered. Equations are analyzed to calculate the time dependences of overpotential for instantaneous nucleation with kinetic or diffusion control of new-phase growth. The calculated dependences are compared with the experimental ones obtained for silicon electrodeposition from a fluoride–chloride melt.