Structural-Phase State and the Properties of Silumin after Electron-Beam Surface Treatment
- Autores: Ivanov Y.1,2, Gromov V.3, Konovalov S.4, Zagulyaev D.3, Petrikova E.1
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Afiliações:
- Institute of High-Current Electronics, Siberian Branch, Russian Academy of Sciences
- Tomsk National Research State University
- Siberian State Industrial University
- Korolev Samara National Research University
- Edição: Volume 2019, Nº 4 (2019)
- Páginas: 398-402
- Seção: Advanced Materials and Technologies
- URL: https://journals.rcsi.science/0036-0295/article/view/173184
- DOI: https://doi.org/10.1134/S0036029519040189
- ID: 173184
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Resumo
Abstract—Modern materials-science techniques are used to analyze the gradient structural-phase states and the nanohardness of hypereutectic silumin after high-current electron-beam melting of the surface layer. Electron-beam treatment is shown to dissolve silicon inclusions and intermetallic compounds observed in the initial state and form an aluminum cellular high-rate solidification structure and lamella eutectic grains. The content of alloying elements decreases by a factor of 1.5–2. The hardness of the irradiated silumin is found to change nonmonotonically and achieves its maximum at a distance of 30–50 μm from the surface. The maximum value is four times higher than the hardness of the unirradiated material. The radiation-induced changes in the silumin structure and hardness are explained.
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Sobre autores
Yu. Ivanov
Institute of High-Current Electronics, Siberian Branch, Russian Academy of Sciences; Tomsk National Research State University
Autor responsável pela correspondência
Email: yufi55@mail.ru
Rússia, Tomsk, 634055; Tomsk, 634050
V. Gromov
Siberian State Industrial University
Autor responsável pela correspondência
Email: gromov@physics.sibsiu.ru
Rússia, Novokuznetsk, 654006
S. Konovalov
Korolev Samara National Research University
Email: gromov@physics.sibsiu.ru
Rússia, Samara, 443086
D. Zagulyaev
Siberian State Industrial University
Email: gromov@physics.sibsiu.ru
Rússia, Novokuznetsk, 654006
E. Petrikova
Institute of High-Current Electronics, Siberian Branch, Russian Academy of Sciences
Email: gromov@physics.sibsiu.ru
Rússia, Tomsk, 634055
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