Magnetic anisotropy induced in the nanocrystalline FeZrN films prepared by oblique-angle magnetron sputtering

E. N. Sheftel’; E. V. Kharin; V. A. Tedzhetov; G. Sh. Usmanova; A. I. Krikunov

doi:10.1134/S0036029516090147

Magnetic anisotropy induced in the nanocrystalline FeZrN films prepared by oblique-angle magnetron sputtering

Authors: Sheftel’ E.N.¹, Kharin E.V.¹, Tedzhetov V.A.¹, Usmanova G.S.¹, Krikunov A.I.²
Affiliations:
1. Baikov Institute of Metallurgy and Materials Science
2. OOO Fotron-Avto
Issue: Vol 2016, No 9 (2016)
Pages: 826-831
Section: Article
URL: https://journals.rcsi.science/0036-0295/article/view/170850
DOI: https://doi.org/10.1134/S0036029516090147
ID: 170850

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Abstract

Nanocrystalline Fe₇₇Zr₇N₁₆ films are prepared by oblique-angle magnetron sputtering. The effect of the ion beam angle and subsequent annealing on the phase and structural states, the coercive force, the saturation magnetization, the remanent magnetization, and the induced in-plane magnetic anisotropy field has been studied. The possibility of natural ferromagnetic resonance in these films at gigahertz frequencies is estimated.