Electric and adhesion properties of an interface between Sn1 − xMnxTe single crystals and Bi–Sn alloys


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The adhesion and electric properties of an interface between Sn1 − xMnxTe single crystals and a 57 wt % Bi and 43 wt % Sn alloy in a temperature range of ∼77–300 K are studied. It is shown that the Bi–Sn alloy and the above single crystals form an ohmic contact that exhibits fairly high work of adhesion and strength of adhesion, along with low contact resistance. The deposition of the Bi–Sn alloy on the end faces of the crystals results in the formation of such intermediate phases as Bi2Te3 and SnTe at the interface, the doping of the near-contact region of the crystal, and the filling of vacancies in the tin sublattice in this region with diffusing atoms of the contact alloy components.

作者简介

T. Alieva

Abdullaev Institute of Physics

编辑信件的主要联系方式.
Email: aliyevat@yahoo.com
阿塞拜疆, Baku, 370143

N. Akhundova

Abdullaev Institute of Physics

Email: aliyevat@yahoo.com
阿塞拜疆, Baku, 370143

G. Abdinova

Abdullaev Institute of Physics

Email: aliyevat@yahoo.com
阿塞拜疆, Baku, 370143

G. Bagieva

Abdullaev Institute of Physics

Email: aliyevat@yahoo.com
阿塞拜疆, Baku, 370143

D. Abdinov

Abdullaev Institute of Physics

Email: aliyevat@yahoo.com
阿塞拜疆, Baku, 370143


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