Enhancement of the Schottky Effect in a Si(100)—Water System Using Porous Polymeric Track-Etched Membranes
- Авторлар: Novikov S.1, Timoshenkov S.1, Korobova N.1, Goryunova E.1
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Мекемелер:
- National Research University of Electronic Technology
- Шығарылым: Том 90, № 4 (2016)
- Беттер: 856-860
- Бөлім: Physical Chemistry of Surface Phenomena
- URL: https://journals.rcsi.science/0036-0244/article/view/168080
- DOI: https://doi.org/10.1134/S0036024416040245
- ID: 168080
Дәйексөз келтіру
Аннотация
The kinetics of variation in the electronic work function (EWF) of single-crystal silicon Si(100) exposed to liquid water is studied. It is shown that immersing porous film track-etched membranes (TEMs) with pore sizes of 3.0–0.1 μm in water containing Si(100) considerably reduces the EWF of single-crystal silicon. It is found that a similar effect is observed when TEMs in the form of caps are held over the surface of water containing Si(100) at a distances of around 1.5–2.0 cm. It is speculated that the occurrence of a developed surface of TEMs in an open system changes the supramolecular structure of the water and leads to the formation of associates (H2O)n with increased dipole moments (compared to molecular moments), enhancing the Schottky effect during sorption on Si(100) surfaces.
Негізгі сөздер
Авторлар туралы
S. Novikov
National Research University of Electronic Technology
Email: spt@miee.ru
Ресей, Moscow, 124498
S. Timoshenkov
National Research University of Electronic Technology
Хат алмасуға жауапты Автор.
Email: spt@miee.ru
Ресей, Moscow, 124498
N. Korobova
National Research University of Electronic Technology
Email: spt@miee.ru
Ресей, Moscow, 124498
E. Goryunova
National Research University of Electronic Technology
Email: spt@miee.ru
Ресей, Moscow, 124498