Sensory properties of oxide films with high concentrations of conduction electrons
- Authors: Kozhushner M.A.1, Bodneva V.L.1, Belysheva T.V.1,2, Gerasimov G.N.1,2, Gromov V.F.1,2, Ikim M.I.1, Paltiel Y.3, Spiridonova E.Y.1,2, Trakhtenberg L.I.1,2
-
Affiliations:
- Semenov Institute of Chemical Physics
- Karpov Research Institute of Physical Chemistry
- Department of Applied Physics, Center for Nanoscience and Nanotechnology
- Issue: Vol 91, No 3 (2017)
- Pages: 572-576
- Section: Physical Chemistry of Surface Phenomena
- URL: https://journals.rcsi.science/0036-0244/article/view/169358
- DOI: https://doi.org/10.1134/S0036024417030153
- ID: 169358
Cite item
Abstract
The dependence of a sensor’s response to hydrogen on the temperature and hydrogen pressure in an indium oxide nanostructured film is measured. A theory of sensor’s response to reducing gases in nanostructured semiconducting oxides with high concentrations of electrons in the conduction band is developed (using the example of In2O3). It is shown that the capture of conduction electrons by adsorbed oxygen redistributes the electrons in nanoparticles and reduces the surface electron density and the conductivity of a system; the conductivity is proportional to the electron density in nanoparticle contacts, i.e., to the surface electron density. It is found that atomic oxygen ions react with reducing gases (H2, CO) during adsorption of the latter: electrons are released and enter the volumes of nanoparticles; the conductivity of the system grows, creating the sensory effect. Using a model developed earlier to describe the distribution of conduction electrons in a semiconductor nanoparticle, a kinetic scheme corresponding to the above scenario is built and corresponding equations are solved. As a result, a theoretical dependence of a sensor’s sensitivity to temperature is found that describes the experimental data well.
About the authors
M. A. Kozhushner
Semenov Institute of Chemical Physics
Author for correspondence.
Email: kozhushner@gmail.com
Russian Federation, Moscow, 117977
V. L. Bodneva
Semenov Institute of Chemical Physics
Email: kozhushner@gmail.com
Russian Federation, Moscow, 117977
T. V. Belysheva
Semenov Institute of Chemical Physics; Karpov Research Institute of Physical Chemistry
Email: kozhushner@gmail.com
Russian Federation, Moscow, 117977; Moscow, 103064
G. N. Gerasimov
Semenov Institute of Chemical Physics; Karpov Research Institute of Physical Chemistry
Email: kozhushner@gmail.com
Russian Federation, Moscow, 117977; Moscow, 103064
V. F. Gromov
Semenov Institute of Chemical Physics; Karpov Research Institute of Physical Chemistry
Email: kozhushner@gmail.com
Russian Federation, Moscow, 117977; Moscow, 103064
M. I. Ikim
Semenov Institute of Chemical Physics
Email: kozhushner@gmail.com
Russian Federation, Moscow, 117977
Y. Paltiel
Department of Applied Physics, Center for Nanoscience and Nanotechnology
Email: kozhushner@gmail.com
Israel, Jerusalem, 91904
E. Yu. Spiridonova
Semenov Institute of Chemical Physics; Karpov Research Institute of Physical Chemistry
Email: kozhushner@gmail.com
Russian Federation, Moscow, 117977; Moscow, 103064
L. I. Trakhtenberg
Semenov Institute of Chemical Physics; Karpov Research Institute of Physical Chemistry
Email: kozhushner@gmail.com
Russian Federation, Moscow, 117977; Moscow, 103064