Мақаланы E-mail арқылы жіберу Structure and Chemical Composition of Manganese-Doped GaSb Dislocations
- Авторлар: Sanygin V.P.1, Izotov A.D.1, Pashkova O.N.1
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Мекемелер:
- Kurnakov Institute of General and Inorganic Chemistry
- Шығарылым: Том 63, № 9 (2018)
- Беттер: 1149-1155
- Бөлім: Synthesis and Properties of Inorganic Compounds
- URL: https://journals.rcsi.science/0036-0236/article/view/168961
- DOI: https://doi.org/10.1134/S0036023618090152
- ID: 168961
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Аннотация
Electron microscopic observations showed that the preparation of magnetic semiconductor GaSb〈Mn〉 by melt quenching is accompanied by discrete manganese precipitation on GaSb dislocations, this precipitation generating inclusions sized from a split micrometer to several micrometers. The chemical composition of microinclusions was determined by electron probe microanalysis. The superposition of the magnetic properties of compounds that are formed in the Mn–Sb system determines the magnetic properties of GaSb〈Mn〉.
Авторлар туралы
V. Sanygin
Kurnakov Institute of General and Inorganic Chemistry
Хат алмасуға жауапты Автор.
Email: sanygin@igic.ras.ru
Ресей, Moscow, 119991
A. Izotov
Kurnakov Institute of General and Inorganic Chemistry
Email: sanygin@igic.ras.ru
Ресей, Moscow, 119991
O. Pashkova
Kurnakov Institute of General and Inorganic Chemistry
Email: sanygin@igic.ras.ru
Ресей, Moscow, 119991
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