Boron, carbon, and aluminum supertetrahedral graphane analogues


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The electronic and spatial structures of carbon, boron, and aluminum supertetrahedrane models of graphane have been studied by means of density functional theory methods in the supermolecular approximation (B3LYP/6-311G(df,2p)) and with imposing periodic boundary conditions (PBEPBE/6-311G (d,p), HSEH1PBE/6-311G (d,p)). Calculations predict that pure boron and aluminum structures are narrow-gap semiconductors. For supertetrahedral carbon graphane, calculations predict properties intermediate between the semiconductor and insulator properties. All bonds in the carbon system are two-center two-electron (2с–2е), while for the boron system, intratetrahedrane bonds are three-center two-electron (3с–2е), and intertetrahedrane bonds are common two-center two-electron bonds (2с–2е).

作者简介

D. Steglenko

Research Institute of Physical and Organic Chemistry

编辑信件的主要联系方式.
Email: sting@ipoc.sfedu.ru
俄罗斯联邦, Rostov-on-Don, 344090

S. Zaitsev

Research Institute of Physical and Organic Chemistry

Email: sting@ipoc.sfedu.ru
俄罗斯联邦, Rostov-on-Don, 344090

I. Getmanskii

Research Institute of Physical and Organic Chemistry

Email: sting@ipoc.sfedu.ru
俄罗斯联邦, Rostov-on-Don, 344090

V. Koval

Research Institute of Physical and Organic Chemistry

Email: sting@ipoc.sfedu.ru
俄罗斯联邦, Rostov-on-Don, 344090

R. Minyaev

Research Institute of Physical and Organic Chemistry

Email: sting@ipoc.sfedu.ru
俄罗斯联邦, Rostov-on-Don, 344090

V. Minkin

Research Institute of Physical and Organic Chemistry

Email: sting@ipoc.sfedu.ru
俄罗斯联邦, Rostov-on-Don, 344090

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