Factors that reduce the duration of picosecond stimulated emission of the AlxGa1–xAs–GaAs–AlxGa1–xAs heterostructure
- 作者: Ageeva N.N.1, Bronevoi I.L.1, Krivonosov A.N.1
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隶属关系:
- Kotel’nikov Institute of Radioengineering and Electronics RAS
- 期: 卷 70, 编号 2 (2025)
- 页面: 165-175
- 栏目: ФИЗИЧЕСКИЕ ПРОЦЕССЫ В ЭЛЕКТРОННЫХ ПРИБОРАХ
- URL: https://journals.rcsi.science/0033-8494/article/view/296197
- DOI: https://doi.org/10.31857/S0033849425020071
- EDN: https://elibrary.ru/GLYCJG
- ID: 296197
如何引用文章
详细
New experimental data have been obtained indicating the following two reasons for the previously discovered significant decrease in the duration of the intrinsic picosecond emission of the AlxGa1–xAs–GaAs–AlxGa1–xAs heterostructure emerging from its end in a preferred direction: 1) the emission reflected from the end returning to the active region takes up a significant portion of the population inversion energy that would otherwise be spent on generating emission moving toward the end; 2) the resulting inhomogeneities in the reflected emission caused such a switching of the states of the multistable photonic crystal induced in the heterostructure by its emission that the forbidden zone for the emission emerging from the end in a preferred direction grew, and the emission trajectories changed in the heterostructure and, as a consequence, in the air space.
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作者简介
N. Ageeva
Kotel’nikov Institute of Radioengineering and Electronics RAS
Email: bil@cplire.ru
俄罗斯联邦, Mokhovaya Srt., 11, build. 7, Moscow, 125009
I. Bronevoi
Kotel’nikov Institute of Radioengineering and Electronics RAS
编辑信件的主要联系方式.
Email: bil@cplire.ru
俄罗斯联邦, Mokhovaya Srt., 11, build. 7, Moscow, 125009
A. Krivonosov
Kotel’nikov Institute of Radioengineering and Electronics RAS
Email: bil@cplire.ru
俄罗斯联邦, Mokhovaya Srt., 11, build. 7, Moscow, 125009
参考
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