Temperature dependence of copper diffusion in different thickness amorphous tungsten/tungsten nitride layer
- Авторы: Asgary S.1, Hantehzadeh M.2, Ghoranneviss M.2
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Учреждения:
- Department of Physics, West Tehran Branch
- Plasma Physics Research Center, Science and Research Branch
- Выпуск: Том 118, № 11 (2017)
- Страницы: 1127-1135
- Раздел: Structure, Phase Transformations, and Diffusion
- URL: https://journals.rcsi.science/0031-918X/article/view/167327
- DOI: https://doi.org/10.1134/S0031918X17100027
- ID: 167327
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Аннотация
The amorphous W/WN films with various thickness (10, 30 and 40 nm) and excellent thermal stability were successfully prepared on SiO2/Si substrate with evaporation and reactive evaporation method. The W/WN bilayer has technological importance because of its low resistivity, high melting point, and good diffusion barrier properties between Cu and Si. The thermal stability was evaluated by X-ray diffractometer (XRD) and Scanning Electron Microscope (SEM). In annealing process, the amorphous W/WN barrier crystallized and this phenomenon is supposed to be the start of Cu atoms diffusion through W/WN barrier into Si. With occurrence of the high-resistive Cu3Si phase, the W/WN loses its function as a diffusion barrier. The primary mode of Cu diffusion is the diffusion through grain boundaries that form during heat treatments. The amorphous structure with optimum thickness is the key factor to achieve a superior diffusion barrier characteristic. The results show that the failure temperature increased by increasing the W/WN film thickness from 10 to 30 nm but it did not change by increasing the W/WN film thickness from 30 to 40 nm. It is found that the 10 and 40 nm W/WN films are good diffusion barriers at least up to 800°C while the 30 nm W/WN film shows superior properties as a diffusion barrier, but loses its function as a diffusion barrier at about 900°C (that is 100°C higher than for 10 and 40 nm W/WN films).
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Об авторах
Somayeh Asgary
Department of Physics, West Tehran Branch
Автор, ответственный за переписку.
Email: sima198124@yahoo.com
Иран, Tehran, Iran, Tehran, 1477893855
Mohammad Hantehzadeh
Plasma Physics Research Center, Science and Research Branch
Email: sima198124@yahoo.com
Иран, Tehran, 1477893855
Mahmood Ghoranneviss
Plasma Physics Research Center, Science and Research Branch
Email: sima198124@yahoo.com
Иран, Tehran, 1477893855