Temperature-Dependence of Static Magnetic Properties of FeGa Thin Film Fabricated by Pulsed Laser Deposition
- Авторлар: Yi Zhang 1,2, Turghun M.1, Huang C.1, Wang T.1, Wang F.2, Shi W.2
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Мекемелер:
- Key Laboratory of Optoelectronic Material and Device, Shanghai Normal University
- Mathematics and Science College, Shanghai Normal University
- Шығарылым: Том 120, № 7 (2019)
- Беттер: 626-631
- Бөлім: Electrical and Magnetic Properties
- URL: https://journals.rcsi.science/0031-918X/article/view/168563
- DOI: https://doi.org/10.1134/S0031918X19070123
- ID: 168563
Дәйексөз келтіру
Аннотация
FeGa thin films have been deposited onto (100)-oriented GaAs and (001)-oriented Si substrates at different temperatures by pulsed laser deposition. It has been shown that at different substrate temperatures, magnetic properties of FeGa films greatly change, which is mainly dependent on different crystal textures. The presence of the structure consisting of D03-ordered grain phase and bcc α-Fe crystal structure (A2) has been revealed using X-ray diffraction analysis. The diffraction peak of FeGa (001) direction, which corresponds to the D03-ordered granular phase, was observed when the temperatures of the GaAs substrate were 400 and 600°C. The diffraction peak that corresponds to (110) direction of the bcc A2 structure has appeared at 800°C. However, the FeGa film on the Si substrate did not demonstrate any obvious structural change. The changes in the magnetic properties can be mainly attributed to changes in the roughness and the lattice mismatch between FeGa and Si.
Негізгі сөздер
Авторлар туралы
Yi Zhang
Key Laboratory of Optoelectronic Material and Device, Shanghai Normal University; Mathematics and Science College, Shanghai Normal University
Хат алмасуға жауапты Автор.
Email: yzhang@shnu.edu.cn
ҚХР, Shanghai, 200234; Shanghai, 200234
Mutellip Turghun
Key Laboratory of Optoelectronic Material and Device, Shanghai Normal University
Email: yzhang@shnu.edu.cn
ҚХР, Shanghai, 200234
Chao Huang
Key Laboratory of Optoelectronic Material and Device, Shanghai Normal University
Email: yzhang@shnu.edu.cn
ҚХР, Shanghai, 200234
Tao Wang
Key Laboratory of Optoelectronic Material and Device, Shanghai Normal University
Email: yzhang@shnu.edu.cn
ҚХР, Shanghai, 200234
FeiFei Wang
Mathematics and Science College, Shanghai Normal University
Email: yzhang@shnu.edu.cn
ҚХР, Shanghai, 200234
Wang Shi
Mathematics and Science College, Shanghai Normal University
Email: yzhang@shnu.edu.cn
ҚХР, Shanghai, 200234