The Influence of Tensile Stress on the Recrystallization and Texture Stability of Ni–5 at % W Long Tapes
- Авторлар: Yu D.1, Ma L.1, Suo H.L.1, Liu J.1, Ji Y.T.1, Cui J.1, Tian H.2, Gao M.M.3, Liu M.1, Wang Y.1
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Мекемелер:
- College of Materials Science and Engineering, Beijing University of Technology
- College of Materials, Tsinghua University
- Ningxia Key Laboratory for Photovoltaic Materials, Ningxia University
- Шығарылым: Том 120, № 6 (2019)
- Беттер: 570-577
- Бөлім: Structure, Phase Transformations, and Diffusion
- URL: https://journals.rcsi.science/0031-918X/article/view/168531
- DOI: https://doi.org/10.1134/S0031918X19060048
- ID: 168531
Дәйексөз келтіру
Аннотация
The microstructure and crystal orientation of Ni–5 at % W (Ni5W) long tapes during recovery and recrystallization processes under various tensile stresses are studied systematically by using a tensile stress annealing equipment designed in our University. Comparing these two processes with and without tensile stresses, it is found that tensile stresses can promote recrystallization, for example: the cube orientation fractions under a tensile stress of 20 MPa is twice as high as without tensile stress at 650°C. In the complete recrystallization process, tensile stresses below 10 MPa have little effect on the microstructure and crystal orientation. When the tensile stress is increased to 25 MPa, the grain boundary grooves are obviously deepened into cracks, while the fractions of both low angle grain boundaries and cube texture decreased. This is in contrast to an increase of the fractions of Σ3 twin boundaries showing a more abnormal grain growth. The effects of tensile stresses on the annealing process of Ni5W long tapes are investigated experimentally. They are expected to guide the reel-to-reel dynamic recrystallization annealing of Ni5W long tapes and to promote the transition from laboratory to industrialization.
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Авторлар туралы
D. Yu
College of Materials Science and Engineering, Beijing University of Technology
Email: honglisuo@bjut.edu.cn
ҚХР, Beijing, 100124
L. Ma
College of Materials Science and Engineering, Beijing University of Technology
Хат алмасуға жауапты Автор.
Email: malin@bjut.edu.cn
ҚХР, Beijing, 100124
H. Suo
College of Materials Science and Engineering, Beijing University of Technology
Хат алмасуға жауапты Автор.
Email: honglisuo@bjut.edu.cn
ҚХР, Beijing, 100124
J. Liu
College of Materials Science and Engineering, Beijing University of Technology
Email: honglisuo@bjut.edu.cn
ҚХР, Beijing, 100124
Y. Ji
College of Materials Science and Engineering, Beijing University of Technology
Email: honglisuo@bjut.edu.cn
ҚХР, Beijing, 100124
J. Cui
College of Materials Science and Engineering, Beijing University of Technology
Email: honglisuo@bjut.edu.cn
ҚХР, Beijing, 100124
H. Tian
College of Materials, Tsinghua University
Email: honglisuo@bjut.edu.cn
ҚХР, Tsinghua
M. Gao
Ningxia Key Laboratory for Photovoltaic Materials, Ningxia University
Email: honglisuo@bjut.edu.cn
ҚХР, Ningxia
M. Liu
College of Materials Science and Engineering, Beijing University of Technology
Email: honglisuo@bjut.edu.cn
ҚХР, Beijing, 100124
Y. Wang
College of Materials Science and Engineering, Beijing University of Technology
Email: honglisuo@bjut.edu.cn
ҚХР, Beijing, 100124
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