Email this article Spin-Polarized Electron Injection into an InSb Semiconductor
- Authors: Viglin N.A.1, Bebenin N.G.1
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Affiliations:
- Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
- Issue: Vol 119, No 13 (2018)
- Pages: 1289-1292
- Section: Electrical and Magnetic Properties
- URL: https://journals.rcsi.science/0031-918X/article/view/168106
- DOI: https://doi.org/10.1134/S0031918X18130136
- ID: 168106
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Abstract
The main stages of the study of spin-polarized electron injection into InSb semiconductor are considered. The characteristics of electromagnetic absorption and radiation due to spin-polarized electron injection into an InSb are given. The fundamental parameters of spin-polarized electrons, such as the relaxation time and spin diffusion length, are determined. The spin polarization of the conduction electrons in InSb is measured by direct detection.
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About the authors
N. A. Viglin
Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
Author for correspondence.
Email: viglin@imp.uran.ru
Russian Federation, Ekaterinburg, 620108
N. G. Bebenin
Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences
Email: viglin@imp.uran.ru
Russian Federation, Ekaterinburg, 620108
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