Spin-Polarized Electron Injection into an InSb Semiconductor


Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

The main stages of the study of spin-polarized electron injection into InSb semiconductor are considered. The characteristics of electromagnetic absorption and radiation due to spin-polarized electron injection into an InSb are given. The fundamental parameters of spin-polarized electrons, such as the relaxation time and spin diffusion length, are determined. The spin polarization of the conduction electrons in InSb is measured by direct detection.

About the authors

N. A. Viglin

Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences

Author for correspondence.
Email: viglin@imp.uran.ru
Russian Federation, Ekaterinburg, 620108

N. G. Bebenin

Mikheev Institute of Metal Physics, Ural Branch, Russian Academy of Sciences

Email: viglin@imp.uran.ru
Russian Federation, Ekaterinburg, 620108

Supplementary files

Supplementary Files
Action
1. JATS XML

Copyright (c) 2018 Pleiades Publishing, Ltd.