Control of Low-Field Hysteresis Loop Shift of Spin Valves

Abstract

Spin valves that comprise synthetic antiferromagnet as a component of pinned layer and an exchange-coupled ferromagnet/Ru/ferromagnet structure in the free layer have been prepared by magnetron sputtering. Microobjects have been formed from spin valves by optical and electron-beam lithography. It has been shown that the shift of the low-field magnetoresistance hysteresis loop decreases as the thicknes of the Ru spacer in the free layer of spin valve increases. The almost hysteresis-free odd-field dependences of the magnetoresistance were obtained for micron-sized samples; in this case, the sensitivity is 0.2%/Oe.