Electronic transport in polycrystalline samples of icosahedral phases
- Authors: Vekilov Y.K.1, Chernikov M.A.1, Dolinichek Y.2
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Affiliations:
- Department of Theoretical Physics and Quantum Technologies
- Jozef Stefan Institute
- Issue: Vol 117, No 1 (2016)
- Pages: 16-21
- Section: Electrical and Magnetic Properties
- URL: https://journals.rcsi.science/0031-918X/article/view/166203
- DOI: https://doi.org/10.1134/S0031918X15110113
- ID: 166203
Cite item
Abstract
The low-temperature electronic transport in polycrystals of quasicrystalline phases with an icosahedral structure has been analyzed within the model of the granular electronic system. In this model, the grains (drops) of a metallic icosahedral phase are surrounded by extended defects and grain boundaries, which create an insulating environment. The electron transport in this model is determined by the size quantization of electronic states inside metallic grains, by intergranular tunneling, and by electrostatic barriers. Depending on the temperature and structural state of the system, the hopping conductivity with variable lengths of jumps in the Efros–Shklovskii or Mott regime is observed with predominantly elastic cotunneling. In the case of strong intergranular coupling, the system passes into the metallic regime with the exponential temperature dependence of the electrical conductivity.
About the authors
Yu. Kh. Vekilov
Department of Theoretical Physics and Quantum Technologies
Author for correspondence.
Email: yuri.vekilov@gmail.com
Russian Federation, Leniniskii pr. 4, Moscow, 119049
M. A. Chernikov
Department of Theoretical Physics and Quantum Technologies
Email: yuri.vekilov@gmail.com
Russian Federation, Leniniskii pr. 4, Moscow, 119049
Ya. Dolinichek
Jozef Stefan Institute
Email: yuri.vekilov@gmail.com
Slovenia, Yamova 39, Ljubljana, 1000