Room Temperature Optical Thermometry Based on the Luminescence of the SiV Defects in Diamond


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Abstract

Diamond microcrystals containing silicon-vacancy (SiV) defects were synthesized by using a high-pressure high-temperature treatment of a mixture of pertinent organic-inorganic precursors. Photoluminescence of the SiV defects and its temperature dependence (80–400 K) was studied. A strong sharp zero-phonon line (ZPL) at 738 nm was recorded at all temperatures under 488 nm laser excitation. In particular the thermally induced shift of the ZPL was found promising for optical temperature sensing in the near infrared spectral range at biomedically relevant temperatures.

About the authors

C. Miller

Institute of Physics, University of Tartu

Email: ilmo.sildos@ut.ee
Estonia, Tartu, EE50411

L. Puust

Institute of Physics, University of Tartu

Email: ilmo.sildos@ut.ee
Estonia, Tartu, EE50411

V. Kiisk

Institute of Physics, University of Tartu

Email: ilmo.sildos@ut.ee
Estonia, Tartu, EE50411

E. Ekimov

Institute for High Pressure Physics, RAS

Email: ilmo.sildos@ut.ee
Russian Federation, TroitskMoscow, 142190

I. Vlasov

Prokhorov General Physics Institute RAS

Email: ilmo.sildos@ut.ee
Russian Federation, Moscow, 119991

Y. Orlovskii

Institute of Physics, University of Tartu; Prokhorov General Physics Institute RAS

Email: ilmo.sildos@ut.ee
Estonia, Tartu, EE50411; Moscow, 119991

I. Sildos

Institute of Physics, University of Tartu

Author for correspondence.
Email: ilmo.sildos@ut.ee
Estonia, Tartu, EE50411

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