Room Temperature Optical Thermometry Based on the Luminescence of the SiV Defects in Diamond
- Authors: Miller C.1, Puust L.1, Kiisk V.1, Ekimov E.2, Vlasov I.3, Orlovskii Y.1,3, Sildos I.1
 - 
							Affiliations: 
							
- Institute of Physics, University of Tartu
 - Institute for High Pressure Physics, RAS
 - Prokhorov General Physics Institute RAS
 
 - Issue: Vol 126, No 1 (2019)
 - Pages: 59-61
 - Section: Optical Sensors and Transducers
 - URL: https://journals.rcsi.science/0030-400X/article/view/165917
 - DOI: https://doi.org/10.1134/S0030400X19010119
 - ID: 165917
 
Cite item
Abstract
Diamond microcrystals containing silicon-vacancy (SiV) defects were synthesized by using a high-pressure high-temperature treatment of a mixture of pertinent organic-inorganic precursors. Photoluminescence of the SiV defects and its temperature dependence (80–400 K) was studied. A strong sharp zero-phonon line (ZPL) at 738 nm was recorded at all temperatures under 488 nm laser excitation. In particular the thermally induced shift of the ZPL was found promising for optical temperature sensing in the near infrared spectral range at biomedically relevant temperatures.
About the authors
C. Miller
Institute of Physics, University of Tartu
														Email: ilmo.sildos@ut.ee
				                					                																			                												                	Estonia, 							Tartu, EE50411						
L. Puust
Institute of Physics, University of Tartu
														Email: ilmo.sildos@ut.ee
				                					                																			                												                	Estonia, 							Tartu, EE50411						
V. Kiisk
Institute of Physics, University of Tartu
														Email: ilmo.sildos@ut.ee
				                					                																			                												                	Estonia, 							Tartu, EE50411						
E. Ekimov
Institute for High Pressure Physics, RAS
														Email: ilmo.sildos@ut.ee
				                					                																			                												                	Russian Federation, 							TroitskMoscow, 142190						
I. Vlasov
Prokhorov General Physics Institute RAS
														Email: ilmo.sildos@ut.ee
				                					                																			                												                	Russian Federation, 							Moscow, 119991						
Y. Orlovskii
Institute of Physics, University of Tartu; Prokhorov General Physics Institute RAS
														Email: ilmo.sildos@ut.ee
				                					                																			                												                	Estonia, 							Tartu, EE50411; Moscow, 119991						
I. Sildos
Institute of Physics, University of Tartu
							Author for correspondence.
							Email: ilmo.sildos@ut.ee
				                					                																			                												                	Estonia, 							Tartu, EE50411						
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