Optical Properties of Thin Films of Zinc Phthalocyanines Determined by Spectroscopic Ellipsometry
- Authors: Kruchinin V.N.1, Klyamer D.D.2,3, Spesivtsev E.V.1, Rykhlitskii S.V.1, Basova T.V.2,3
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
- Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences
- Novosibirsk State University
- Issue: Vol 125, No 6 (2018)
- Pages: 1019-1024
- Section: Optics of Low-Dimensional Structures, Mesostructures, and Metamaterials
- URL: https://journals.rcsi.science/0030-400X/article/view/165898
- DOI: https://doi.org/10.1134/S0030400X18120093
- ID: 165898
Cite item
Abstract
The optical properties of thin films based on unsubstituted and tetrafluoro-substituted zinc phthalocyanines synthesized by physical vapor deposition are studied within the wavelength range of 250–1000 nm. Spectroscopic ellipsometry shows that films based on zinc phthalocyanines have uniform thicknesses and optical parameters, strongly absorb visible light, and have characteristic absorption peaks corresponding to electronic transitions in the system of conjugated double bonds of phthalocyanine rings. Introduction of fluorine substituents into peripheral positions of the zinc phthalocyanine molecule leads to an increase in light absorption and a shift of the main absorption maximum to longer wavelengths (bathochromic shift). The absorption spectra are described using the Lorentz–Drude dispersion model. It is shown that the films based on a mixture of phthalocyanines can be well described using the Bruggeman effective medium model.
About the authors
V. N. Kruchinin
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Author for correspondence.
Email: vladd.kruch@yandex.ru
Russian Federation, Novosibirsk, 630090
D. D. Klyamer
Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: vladd.kruch@yandex.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
E. V. Spesivtsev
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: vladd.kruch@yandex.ru
Russian Federation, Novosibirsk, 630090
S. V. Rykhlitskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
Email: vladd.kruch@yandex.ru
Russian Federation, Novosibirsk, 630090
T. V. Basova
Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences; Novosibirsk State University
Email: vladd.kruch@yandex.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
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