Email this article Absorption spectra of some radiation-doped A3B5 compounds
- Authors: Rashidova S.S.1
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Affiliations:
- Institute of Physics of National Academy of Science of Azerbaijan
- Issue: Vol 121, No 5 (2016)
- Pages: 710-712
- Section: Condensed-Matter Spectroscopy
- URL: https://journals.rcsi.science/0030-400X/article/view/165113
- DOI: https://doi.org/10.1134/S0030400X16110175
- ID: 165113
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Abstract
Temperature dependences of the absorption coefficient in A3B5 crystals before and after irradiation by electrons with an energy of 6 MeV and a dose of Ф = 2 × 1017 electron/cm2 are studied. A low-lying Ev + 0.4 eV center of a nonimpurity origin is found in both undoped GaAs crystals and those doped with various impurities (Te, Zn, Sn, Ga1–xInxAs, InP, and InP〈Fe〉).
About the authors
Sh. Sh. Rashidova
Institute of Physics of National Academy of Science of Azerbaijan
Author for correspondence.
Email: sh.sh.rashidova@gmail.com
Azerbaijan, Baku, 1143
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