Photoinduced phenomena in amorphous As4S3Se3–Sn films

Abstract

We investigate the kinetics of photodarkening and recording of holographic diffraction gratings in amorphous As₄S₃Se₃ thin-film structures doped with tin (Sn) in concentrations of 0–10 at %. It is established that an increase in the Sn concentration leads to a decrease in the photodarkening rate and degree. The photodarkening kinetics is approximated by a stretched exponential function. It is found that an increase in the Sn concentration leads to a decrease in the transmission (photodarkening) variation in the investigated As₄S₃Se₃–Sn films. It is determined that, in the recording of holographic diffraction gratings at a Sn concentration of 3–8 at %, the As₄S₃Se₃–Sn films exhibit the maximum sensitivity and diffraction efficiency of the recorded gratings. It is shown that the dependence of diffraction efficiency on the As₄S₃Se₃ film thickness has the maximum at a film thickness of 4 µm.