A Coulomb Blockade in a Nanostructure Based on Single Intramolecular Charge Center


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Abstract

A novel technique for the production of metal electrodes of a nanotransistor with a nanogap less than 4 nm between them is developed on the basis of controlling the electromigration of previously suspended nanowires of the system. A method that allows the embedding of a molecule of Rh(III) terpyridine with aurophilic ligands between electrodes is elaborated, as well. The characteristics of electron transport through a system that consists of the specified molecule with a single-atom charge center indicate the correlated (single-electron) tunneling of electrons.

About the authors

V. R. Gaydamachenko

Laboratory of Cryoelectronics, Department of Physics

Author for correspondence.
Email: 1994VG@gmail.com
Russian Federation, Moscow, 119991

E. K. Beloglazkina

Department of Chemistry

Email: 1994VG@gmail.com
Russian Federation, Moscow, 119991

R. A. Petrov

Department of Chemistry

Email: 1994VG@gmail.com
Russian Federation, Moscow, 119991

S. A. Dagesyan

Laboratory of Cryoelectronics, Department of Physics

Email: 1994VG@gmail.com
Russian Federation, Moscow, 119991

I. V. Sapkov

Laboratory of Cryoelectronics, Department of Physics

Email: 1994VG@gmail.com
Russian Federation, Moscow, 119991

E. S. Soldatov

Laboratory of Cryoelectronics, Department of Physics

Email: 1994VG@gmail.com
Russian Federation, Moscow, 119991

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