Light-emitting AlGaAs/GaAs diodes based on ingaas strain-compensated quantum wells with minimized internal losses OF 940 nm radiation absorption

Мұқаба

Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

IR light-emitting diodes based on InGaAs/AlGaAs multiple quantum wells and AlxGa1–xAsyP1–y-layers that compensate stresses in the active region have been developed. The optical losses caused by absorption of radiation generated by the active region (λ = 940 nm) were studied at different doping levels of n-GaAs substrates. It has been shown that reducing the donor doping level from 4 × 1018 to 5 × × 1017 cm–3 gives an increase in the quantum efficiency of LEDs by ~ 30%. A technology that eliminates optical losses caused by absorption during radiation output has been developed. By removing the growth substrate and transferring the device structure to a carrier substrate with the formation of a rear metal reflector, LEDs were created that demonstrate a twofold increase in external quantum efficiency and efficiency (~ 40%) compared to the technology of outputting radiation through an n-GaAs substrate.

Авторлар туралы

R. Salii

Ioffe Institute

Хат алмасуға жауапты Автор.
Email: r.saliy@mail.ioffe.ru
Ресей, St. Petersburg

A. Malevskaya

Ioffe Institute

Email: r.saliy@mail.ioffe.ru
Ресей, St. Petersburg

D. Malevskii

Ioffe Institute

Email: r.saliy@mail.ioffe.ru
Ресей, St. Petersburg

S. Mintairov

Ioffe Institute

Email: r.saliy@mail.ioffe.ru
Ресей, St. Petersburg

A. Nadtochiy

Ioffe Institute

Email: r.saliy@mail.ioffe.ru
Ресей, St. Petersburg

N. Kalyuzhnyy

Ioffe Institute

Email: r.saliy@mail.ioffe.ru
Ресей, St. Petersburg

Әдебиет тізімі

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