X-ray topo-tomography of large HPHT synthetic diamonds

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Abstract

Extended defects in large synthetic diamonds grown at high pressures and high temperatures (HPHT) using thermal gradient method were studied by X-ray topo-tomography with a laboratory setup. It is shown that temperature and growth rate are the principal factors influencing crystalline quality of the diamonds. Synthesis at high temperatures and low rate allows growth of single crystals with low density of dislocations, stacking faults and microtwin lamellae. Annihilation kinetics of the extended defects during annealing at high pressure implies important role of vacancies diffusion. The annihilation of such defects leads to formation of perfect dislocations.

About the authors

D. A. Zolotov

Shubnikov Institute of Crystallography of the Kurchatov Complex Crystallography and Photonics of the NRC “Kurchatov Institute”

Email: a_shiryaev@mail.ru
Russian Federation, Moscow, 119333

A. V. Buzmakov

Shubnikov Institute of Crystallography of the Kurchatov Complex Crystallography and Photonics of the NRC “Kurchatov Institute”

Email: a_shiryaev@mail.ru
Russian Federation, Moscow, 119333

A. F. Khokhryakov

Sobolev Institute of Geology and Mineralogy, SB RAS

Email: a_shiryaev@mail.ru
Novosibirsk

Y. M. Borzdov

Sobolev Institute of Geology and Mineralogy, SB RAS

Email: a_shiryaev@mail.ru
Russian Federation, Novosibirsk

L. D. Yagudin

Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences

Email: a_shiryaev@mail.ru
Russian Federation, Moscow

Y. N. Palyanov

Sobolev Institute of Geology and Mineralogy, SB RAS

Email: a_shiryaev@mail.ru
Russian Federation, Novosibirsk

I. G. Dyachkova

Shubnikov Institute of Crystallography of the Kurchatov Complex Crystallography and Photonics of the NRC “Kurchatov Institute”

Email: a_shiryaev@mail.ru
Russian Federation, Moscow, 119333

V. E. Asadchikov

Shubnikov Institute of Crystallography of the Kurchatov Complex Crystallography and Photonics of the NRC “Kurchatov Institute”

Email: a_shiryaev@mail.ru
Russian Federation, Moscow, 119333

A. A. Shiryaev

Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences

Author for correspondence.
Email: a_shiryaev@mail.ru
Russian Federation, Moscow

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In the print version, the article was published under the DOI: 10.31857/S0023476125040042


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