MICROSTRUCTURE OF A CrSi2 TRANSITION LAYER PRODUCED BY HOT PRESSING OF Cr AND Si
- Авторлар: Lukasov M.1, Arkharova N.1, Orekhov A.1, Rakova E.1, Solomkin F.2, Klechkovskaya V.1
-
Мекемелер:
- Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences, Moscow, 119333 Russia
- Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia
- Шығарылым: Том 68, № 4 (2023)
- Беттер: 615-620
- Бөлім: НАНОМАТЕРИАЛЫ, КЕРАМИКА
- URL: https://journals.rcsi.science/0023-4761/article/view/137445
- DOI: https://doi.org/10.31857/S002347612360026X
- EDN: https://elibrary.ru/IBYRNK
- ID: 137445
Дәйексөз келтіру
Аннотация
Hot pressing of a Si single crystal in the bulk of electrolytic Cr powder at 1213 K, with subsequent annealing in air, leads to the formation of an intermediate polycrystalline silicide layer at the interface between the initial components. The phase composition and microstructure of the transition layer and its vicinity were investigated by scanning electron microscopy, X-ray energy-dispersive microanalysis, and electron backscatter diffraction. The transition layer has a crystal structure of the hexagonal phase of chromium disilicide (sp. gr. P6222). An additional annealing up to 120 h leads to insignificant recrystallization of small grains into larger ones.
Негізгі сөздер
Авторлар туралы
M. Lukasov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences, Moscow, 119333 Russia
Email: klechvv@crys.ras.ru
Россия, Москва
N. Arkharova
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences, Moscow, 119333 Russia
Email: natalya.arkharova@yandex.ru
Россия, Москва
A. Orekhov
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences, Moscow, 119333 Russia
Email: klechvv@crys.ras.ru
Россия, Москва
E. Rakova
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences, Moscow, 119333 Russia
Email: klechvv@crys.ras.ru
Россия, Москва
F. Solomkin
Ioffe Institute, Russian Academy of Sciences, St. Petersburg, 194021 Russia
Email: klechvv@crys.ras.ru
Россия, Санкт-Петербург
V. Klechkovskaya
Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences, Moscow, 119333 Russia
Хат алмасуға жауапты Автор.
Email: klechvv@crys.ras.ru
Россия, Москва
Әдебиет тізімі
- Burkov A.T., Ivanov Y.I. // Silicide Thermoelectrics. In Advanced Thermoelectric Materials / Ed. Park C.R. 2019. V. 165.
- Gel’d P.V., Sidorenko F.A. // Silicides of Transition Metals of the Fourth Period. M.: Metallurgiya, 1971. P. 90.
- Gokhale A.B., Abbaschian G.J. // J. Phase Equilibria. 1987. V. 8. P. 474. https://doi.org/10.1007/BF02893156
- Okamoto H. // J. Phase Equilibria. 2001. V. 22 P. 593. https://doi.org/10.1361/105497101770332866
- Boren B. // Archive Chem., Mineral. Geol. 1933. V. 11. P. 1.
- Dauben C.H., Templeton D.H., Myers C.E. // J. Phys. Chem. 1956. V. 60. P. 443. https://doi.org/10.1021/j150538a015
- Tanaka K., Nawata K., Koiwa M. et al. // Mat. Res. Soc. Symp. Proc. 2001. V. 646. P. 4.3.1.
- Соломкин Ф.Ю., Суворова Е.И., Зайцев В.К. и др. // ЖТФ. 2011. Т. 81. № 2. С. 147.
- Соломкин Ф.Ю., Зайцев В.К., Новиков С.В. и др. // ЖТФ. 2013. Т. 83. № 2. С. 141.
- Соломкин Ф.Ю., Зайцев В.К., Картенко Н.Ф. и др. // ЖТФ. 2010. Т. 80. № 1. С. 152.
- Соломкин Ф.Ю., Зайцев В.К., Картенко Н.Ф. и др. // ЖТФ. 2010. Т. 80. № 5. С. 157.
- Fedorov M., Zaitsev V. // Thermoelectrics Handbook: Macro to Nano / Ed. Rowe D.M. N.Y.: CRC press, 2006. P. 31.
- Burkov A., Vinzelberg H., Schumann J. et al. // J. Appl. Phys. 2004. V. 95. № 12. P. 7903.
- Novikov S.V., Burkov A.T., Schumann J. // J. Electron. Mater. 2014. V. 43. № 6. P. 2420.
- Novikov S.V., Burkov A.T., Schumann J. // J. Alloys Compd. 2013. V. 557. P. 239.
- Hielscher R., Schaeben C. // J. Appl. Cryst. 2008. V. 41. P. 1024.