PHASE COMPOSITION, STRUCTURE, AND MAGNETIC PROPERTIES OF Cd1–хZnхTe SOLID SOLUTIONS AT LOW Zn CONCENTRATIONS

P. L. Podkur; Подкур П. Л.; I. S. Volchkov; Волчков И. С.; M. D. Pavlyuk; Павлюк М. Д.; V. B. Kvartalov; Кварталов В. Б.; R. B. Morgunov; Моргунов Р. Б.; V. M. Kanevskii; Каневский В. М.

doi:10.31857/S0023476123010216

PHASE COMPOSITION, STRUCTURE, AND MAGNETIC PROPERTIES OF Cd1–хZnхTe SOLID SOLUTIONS AT LOW Zn CONCENTRATIONS

Authors: Podkur P.L.¹^,2, Volchkov I.S.¹, Pavlyuk M.D.¹, Kvartalov V.B.¹, Morgunov R.B.³, Kanevskii V.M.¹
Affiliations:
1. Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences, Moscow, 119333 Russia
2. MIREA—Russian Technological University, Moscow, Russia
3. Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432 Russia
Issue: Vol 68, No 1 (2023)
Pages: 51-57
Section: ФИЗИЧЕСКИЕ СВОЙСТВА КРИСТАЛЛОВ
URL: https://journals.rcsi.science/0023-4761/article/view/137363
DOI: https://doi.org/10.31857/S0023476123010216
EDN: https://elibrary.ru/DQOFHG
ID: 137363

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Supplementary files
Statistics

Abstract

Polycrystalline Cd1–хZnхTe (x = 0.005, 0.03, 0.05) ingots have been obtained by the modified Obreimov–Shubnikov method. The selected single-crystal blocks are studied applying the X-ray diffraction analysis, measurement of electrical characteristics, and magnetometry. The concentration dependence of changes in the magnetic and electrical properties of crystals is investiga11ted. It is established that at Zn concentrations of x = 0.03 and 0.05 ferromagnetic ordering is observed in clusters (inclusions) containing iron and/or nickel at 2 K, which is not observed for Cd1–хZnхTe (x = 0.005) samples.

Keywords

Cd1–хZnхTe SOLID SOLUTIONS, PHASE COMPOSITION, STRUCTURE, MAGNETIC PROPERTIES

References

Owens A., Peacock A. // Nucl. Instrum. Methods Phys. Res. A. 2004. V. 531. P. 18. https://doi.org/10.1016/j.nima.2004.05.071
Takeda S. Experimental study of a Si/CdTe semiconductor Compton camera for the next generation of gamma-ray astronomy / Ph. D. Thesis. University of Tokyo. 2009.
Hubbell J.H., Seltzer S.M. Tables of X-Ray Mass Attenuation Coefficients and Mass Energy-Absorption Coefficients from 1 keV to 20 MeV for Elements Z = 1 to 92 and 48 Additional Substances of Dosimetric Interest // National Institute of Standards and Technology. 2004. NISTIR 5632. https://doi.org/10.18434/T4D01F
Del Sordo S., Abbene L., Caroli E. et al. // Sensors. 2009. V. 9 № 5. P. 3491. https://doi.org/10.3390/s90503491
Duarte D.D. Edge effects in a pixelated CdTe radiation detector / Ph. D. Thesis. University of Surrey. 2016. https://doi.org/10.13140/RG.2.2.20470.86081
Chaouai Z., Daniel G., Martinez J.M. et al. // Nucl. Instrum. Methods Phys. Res. A. 2022. V. 1033. P. 166670. https://doi.org/10.1016/j.nima.2022.166670
Clements N., Richtsmeier D., Hart A., Bazalova-Carter M. // J. Instrumentation. 2022. V. 17. P. 1004. https://doi.org/10.1088/1748-0221/17/01/P01004
Brombal L., Donato S., Brun F. et al. // J. Synchrotron Radiat. 2018. V. 25. P. 1068. https://doi.org/10.1107/S1600577518006197
Chen Y., Wang X., Song Q. et al. // AIP Adv. 2018. V. 8. P. 105113. https://doi.org/10.1063/1.5052027
Krucker S., Benz A.O., Hurfordal G.J. et al. // Nucl. Instrum. Methods Phys. Res. A. 2013. V. 732. P. 295. https://doi.org/10.1016/j.nima.2013.05.050
Krause L., Tolborg K., Gronbech T.B.E. et al. // J. Appl. Cryst. 2020. V. 53. P. 635. https://doi.org/10.1107/S1600576720003775
Павлюк М.Д. Дис. “Детекторные кристаллы на основе CdTe и Cd1 – xZnxTe для прямого счета рентгеновских и гамма-квантов”… канд. физ.-мат. наук. М.: ФНИЦ “Кристаллография и фотоника” РАН, 2020.
Шалдин Ю.В., Вархульска И., Рабаданов М.Х., Комарь В.К. // Физика и техника полупроводников. 2004. Т. 38. С. 300.
Raiss A.A., Sbai Y., Bahmad L., Benyoussef A. // J. Magn. Magn. Mater. 2015. V. 385. P. 295. https://doi.org/10.1016/j.jmmm.2015.02.077
Goumrhar F., Bahmad L., Mounkachi O., Benyoussef A. // J. Magn. Magn. Mater. 2017. V. 428. P. 368. https://doi.org/10.1016/j.jmmm.2016.12.041
Chavan K.T., Chandra S., Kshirsagar A. // Mater. Today Commun. 2022. V. 30. P. 103104. https://doi.org/10.1016/j.mtcomm.2021.103104
Allahgholi A., Becker J., Delfs A. et al. // Nucl. Instrum. Methods Phys. Res. A. 2019. V. 942. P. 1. https://doi.org/10.1016/j.nima.2019.06.065
Zerrai A., Cherkaoui K., Marrakchi G. et al. // J. Cryst. Growth. 1999. V. 197. P. 646. https://doi.org/10.1016/S0022-0248(98)00763-5
Marbeuf A., Druilhe R., Triboulet R., Patriarche G. // J. Cryst. Growth. 1992. V. 117. P. 10. https://doi.org/10.1016/0022-0248(92)90707-P
Аветисов И.Х. Дис. “Физико-химические основы технологии кристаллических халькогенидов кадмия и цинка с контролируемой стехиометрией” … д-ра физ.-мат. наук. М.: РХТУ им. Д.И. Менделеева, 2011.
Косяченко А.А., Склярчук В.М., Склярчук О.В., Маслянчук О.Л. // Физика и техника полупроводников. 2011. Т. 45. С. 1323.
Prokesch M., Szeles C. // J. Appl. Phys. 2006. V. 100. P. 014503. https://doi.org/10.1063/1.2209192
Кондрик А.И. // Функциональная микроэлектроника. 2004. № 6. С. 17.
Pavlyuk M.D., Subbotin I.A., Kanevsky V.M., Artemov V.V. // J. Cryst. Growth. 2017. V. 457. P. 112. https://doi.org/10.1016/j.jcrysgro.2016.06.046
Ivanov Yu.M. // J. Cryst. Growth. 1998. V. 194. P. 309. https://doi.org/10.1016/S0022-0248(98)00620-4
Павлюк М.Д., Каневский В.М., Иванов Ю.М. // Журн. неорган. химии. 2013. Т. 58. С. 1082. https://doi.org/10.7868/S0044457X13080187
Кондрик А.И., Ковтун Г.П. // Материалы электроники. 2019. № 4–5. С. 43. https://doi.org/10.15222/TKEA2019.5-6.43
Ivanov Yu.M., Artemov V.V., Kanevsky V.M. et al. // Eur. Phys. J. Appl. Phys. 2004. V. 27. P. 371. https://doi.org/10.1051/epjap:2004086
Комарь В.К., Наливайко Д.П., Герасименко А.С. и др. // Поверхность. Рентген. синхротр. и нейтр. исследования 2002. Т. 3. С. 94.