Convective diffusion from a gas phase to a rotating disk
- Authors: Pankratov E.L.1, Boldyrevskii P.B.1
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Affiliations:
- Lobachevsky Nizhny Novgorod State University
- Issue: Vol 57, No 4 (2016)
- Pages: 637-645
- Section: Article
- URL: https://journals.rcsi.science/0021-8944/article/view/159506
- DOI: https://doi.org/10.1134/S0021894416040076
- ID: 159506
Cite item
Abstract
This paper presents a method for the analytical calculation of the flow velocity of the gas mixture and the concentration of the growth component during vapor-phase epitaxy in a reaction chamber with a rotating substrate holder disk. The concentration of the growth component is analyzed in relation to some epitaxy process parameters.
About the authors
E. L. Pankratov
Lobachevsky Nizhny Novgorod State University
Author for correspondence.
Email: elp2004@mail.ru
Russian Federation, Nizhny Novgorod, 603950
P. B. Boldyrevskii
Lobachevsky Nizhny Novgorod State University
Email: elp2004@mail.ru
Russian Federation, Nizhny Novgorod, 603950
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