Convective diffusion from a gas phase to a rotating disk


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Abstract

This paper presents a method for the analytical calculation of the flow velocity of the gas mixture and the concentration of the growth component during vapor-phase epitaxy in a reaction chamber with a rotating substrate holder disk. The concentration of the growth component is analyzed in relation to some epitaxy process parameters.

About the authors

E. L. Pankratov

Lobachevsky Nizhny Novgorod State University

Author for correspondence.
Email: elp2004@mail.ru
Russian Federation, Nizhny Novgorod, 603950

P. B. Boldyrevskii

Lobachevsky Nizhny Novgorod State University

Email: elp2004@mail.ru
Russian Federation, Nizhny Novgorod, 603950

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