Renormalization of the Effective Electron Mass Governing the Period of Microwave-Induced Resistance Oscillations in ZnO/MgZnO Heterojunctions


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The phenomenon of microwave-induced magnetoresistance oscillations is studied in a series of ZnO/MgZnO heterojunctions characterized by different two-dimensional electron densities n. It is found that the effective electron mass m* determined from the period of microwave-induced magnetoresistance oscillations depends essentially on this parameter. For high densities, the value of m* tends to the effective electron mass in bulk ZnO, while for low densities, m* increases pronouncedly and becomes considerably larger than the electron cyclotron mass. The experimental results give clear evidence of a significant impact of the electron–electron interaction on microwave-induced magnetoresistance oscillations.

作者简介

A. Shchepetilnikov

Institute of Solid State Physics

编辑信件的主要联系方式.
Email: shchepetilnikov@issp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432

Yu. Nefyodov

Institute of Solid State Physics

Email: shchepetilnikov@issp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432

A. Dremin

Institute of Solid State Physics

Email: shchepetilnikov@issp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432

I. Kukushkin

Institute of Solid State Physics

Email: shchepetilnikov@issp.ac.ru
俄罗斯联邦, Chernogolovka, Moscow region, 142432

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