Band gap tuning of Ge/SiC bilayers under an electric field: a density functional study
- 作者: Luo M.1, Xu Y.E.2, Song Y.X.3
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隶属关系:
- Department of Physics
- Department of Electronic Engineering
- Key Laboratory of Polar Materials and Devices
- 期: 卷 106, 编号 1 (2017)
- 页面: 46-50
- 栏目: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/160270
- DOI: https://doi.org/10.1134/S0021364017130021
- ID: 160270
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详细
The structure and electronic properties of Ge/SiC van der Waals (vdW) bilayer under the influence of an electric field have been investigated by the first-principles method. Without an electric field, the system shows a small band gap of 126 meV at the equilibrium state. Interestingly, by applying a vertical external electric field, the results present a parabola-like relationship between the band gap and the strength. As the negative E-field changes from 0.0 to −0.40 V/Å, the band gap first increases to a maximum of about 378 meV and then decreases to zero. A similar trend is exhibited for the positive E-field, ranging from 0.0 to +0.40 V/Å. The band gap reaches a maximum of about 315 meV at +0.10 V/Å. The significant variations of band gap are owing to different states of Ge, Si, and C atoms in conduction band and valence band. The predicted electric field tunable band gap of the Ge/SiC vdW heterostructures is very promising for its potential use in nanodevices.
作者简介
M. Luo
Department of Physics
编辑信件的主要联系方式.
Email: mluo2011@gmail.com
中国, Shanghai, 201209
Y. Xu
Department of Electronic Engineering
Email: mluo2011@gmail.com
中国, Shanghai, 201306
Y. Song
Key Laboratory of Polar Materials and Devices
Email: mluo2011@gmail.com
中国, Shanghai, 200241
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