Mobility of Dirac electrons in HgTe quantum wells
- Авторлар: Dobretsova A.A.1,2, Kvon Z.D.1,2, Braginskii L.S.1,2, Entin M.V.1,2, Mikhailov N.N.1,2
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Мекемелер:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Шығарылым: Том 104, № 6 (2016)
- Беттер: 388-391
- Бөлім: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/159753
- DOI: https://doi.org/10.1134/S0021364016180089
- ID: 159753
Дәйексөз келтіру
Аннотация
The mobility of Dirac electrons (DEs) in HgTe quantum wells with the thickness close to the critical value corresponding to the transition from the direct to inverted spectrum has been studied experimentally and theoretically. The nonmonotonic dependence of this mobility on the electron density is found experimentally. The theory of DE scattering on impurities and fluctuations of the thickness of a well caused by its roughnesses is elaborated. This theory is in good agreement with experiment and explains the observed nonmonotonicity by the decrease in the ratio of the de Broglie wavelength of DEs to the characteristic size of the roughness with the increase in their concentration.
Авторлар туралы
A. Dobretsova
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Хат алмасуға жауапты Автор.
Email: DobretsovaAA@gmail.com
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
Z. Kvon
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: DobretsovaAA@gmail.com
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
L. Braginskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: DobretsovaAA@gmail.com
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
M. Entin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: DobretsovaAA@gmail.com
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
N. Mikhailov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: DobretsovaAA@gmail.com
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
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