Features of the electronic spectrum and optical absorption of ultrathin Bi2Se3 films
- Authors: Tugushev V.V.1, Kulatov E.T.2,3, Golant K.M.1
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Affiliations:
- Kotel’nikov Institute of Radio Engineering and Electronics
- Prokhorov General Physics Institute
- Lebedev Physical Institute
- Issue: Vol 106, No 7 (2017)
- Pages: 422-428
- Section: Optics and Laser Physics
- URL: https://journals.rcsi.science/0021-3640/article/view/160614
- DOI: https://doi.org/10.1134/S0021364017190122
- ID: 160614
Cite item
Abstract
The electronic spectra and relative permittivity of ultrathin (1–3 QL) films of Bi2Se3 topological insulator have been calculated by the density functional theory. The calculated spectra exhibit a characteristic feature: the range of 0.0–0.9 eV below the Fermi level contains two doubly degenerate valence bands (“U-bands”), which are geometrically congruent to low-lying spectral branches in the conduction band. It has been shown that the saturation of optical absorption can result in a significant rearrangement of the electronic structure and properties in the near infrared spectral range in the considered film. In particular, the semiconductor (in the absence of interaction with light) type of conductivity of the film can be changed to the metallic type of conductivity strongly nonlinear in the intensity of light.
About the authors
V. V. Tugushev
Kotel’nikov Institute of Radio Engineering and Electronics
Author for correspondence.
Email: tuvictor@mail.ru
Russian Federation, Moscow, 125009
E. T. Kulatov
Prokhorov General Physics Institute; Lebedev Physical Institute
Email: tuvictor@mail.ru
Russian Federation, Moscow, 119991; Moscow, 119991
K. M. Golant
Kotel’nikov Institute of Radio Engineering and Electronics
Email: tuvictor@mail.ru
Russian Federation, Moscow, 125009
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