Features of the electronic spectrum and optical absorption of ultrathin Bi2Se3 films
- 作者: Tugushev V.V.1, Kulatov E.T.2,3, Golant K.M.1
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隶属关系:
- Kotel’nikov Institute of Radio Engineering and Electronics
- Prokhorov General Physics Institute
- Lebedev Physical Institute
- 期: 卷 106, 编号 7 (2017)
- 页面: 422-428
- 栏目: Optics and Laser Physics
- URL: https://journals.rcsi.science/0021-3640/article/view/160614
- DOI: https://doi.org/10.1134/S0021364017190122
- ID: 160614
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详细
The electronic spectra and relative permittivity of ultrathin (1–3 QL) films of Bi2Se3 topological insulator have been calculated by the density functional theory. The calculated spectra exhibit a characteristic feature: the range of 0.0–0.9 eV below the Fermi level contains two doubly degenerate valence bands (“U-bands”), which are geometrically congruent to low-lying spectral branches in the conduction band. It has been shown that the saturation of optical absorption can result in a significant rearrangement of the electronic structure and properties in the near infrared spectral range in the considered film. In particular, the semiconductor (in the absence of interaction with light) type of conductivity of the film can be changed to the metallic type of conductivity strongly nonlinear in the intensity of light.
作者简介
V. Tugushev
Kotel’nikov Institute of Radio Engineering and Electronics
编辑信件的主要联系方式.
Email: tuvictor@mail.ru
俄罗斯联邦, Moscow, 125009
E. Kulatov
Prokhorov General Physics Institute; Lebedev Physical Institute
Email: tuvictor@mail.ru
俄罗斯联邦, Moscow, 119991; Moscow, 119991
K. Golant
Kotel’nikov Institute of Radio Engineering and Electronics
Email: tuvictor@mail.ru
俄罗斯联邦, Moscow, 125009
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