Atomic and Electronic Structures of Metal-Rich Noncentrosymmetric ZrOx
- Authors: Gritsenko V.A.1,2,3, Perevalov T.V.1,2, Volodin V.A.1,2, Kruchinin V.N.1, Gerasimova A.K.1, Prosvirin I.P.4
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Affiliations:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Novosibirsk State Technical University
- Boreskov Institute of Catalysis, Siberian Branch
- Issue: Vol 108, No 4 (2018)
- Pages: 226-230
- Section: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/161245
- DOI: https://doi.org/10.1134/S002136401816004X
- ID: 161245
Cite item
Abstract
The atomic and electronic structures of metal-rich noncentrosymmetric zirconium oxide synthesized by the ion beam sputtering of a metallic target in an oxygen atmosphere has been studied by X-ray photoelectron spectroscopy, Raman scattering, spectral ellipsometry, and quantum-chemical simulation. It has been established that ZrOx < 2 consists of ZrO2, metallic Zr, and zirconium suboxides ZrOy. The stoichiometry parameter of ZrOy has been estimated. It has been shown that the optical properties of ZrOx < 2 are determined by metallic Zr. A model of fluctuation of the width of the band gap and a potential for electrons and holes in ZrOx < 2 based on spatial fluctuations of the chemical composition has been proposed.
About the authors
V. A. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University; Novosibirsk State Technical University
Email: timson@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090; Novosibirsk, 630073
T. V. Perevalov
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Author for correspondence.
Email: timson@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
V. A. Volodin
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: timson@isp.nsc.ru
Russian Federation, Novosibirsk, 630090; Novosibirsk, 630090
V. N. Kruchinin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: timson@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
A. K. Gerasimova
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: timson@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
I. P. Prosvirin
Boreskov Institute of Catalysis, Siberian Branch
Email: timson@isp.nsc.ru
Russian Federation, Novosibirsk, 630090
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