Rearrangement of the Structure of Paratellurite Crystals in a Near-Surface Layer Caused by the Migration of Charge Carriers in an External Electric Field


Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

The process of formation of surface structures in a paratellurite crystal (α-TeO2) in an external electric field has been studied by in situ X-ray diffraction (XRD) measurements. This process is reversible and its dynamics (duration of tens of minutes) corresponds to the formation of a screening layer near the insulator–metal interface owing to the counter migration of oxygen ions and vacancies in the external electric field. The formation of domains has been observed in the experiment as the broadening and splitting of the XRD curve and is explained by mechanical stresses that appear in the high electric field near the surface in view of the piezoelectric effect and are responsible for a ferroelectric α–β phase transition. A change in the lattice parameter near the anode (surface of the crystal with a positive external charge) has been detected simultaneously. This change is due to the local rearrangement of the crystal structure because of the inflow of oxygen ions in this region and outflow of oxygen vacancies.

About the authors

A. G. Kulikov

Shubnikov Institute of Crystallography, Federal Research Center Crystallography and Photonics; National Research Center Kurchatov Institute

Author for correspondence.
Email: ontonic@gmail.com
Russian Federation, Moscow, 119333; Moscow, 123098

A. E. Blagov

Shubnikov Institute of Crystallography, Federal Research Center Crystallography and Photonics; National Research Center Kurchatov Institute

Email: ontonic@gmail.com
Russian Federation, Moscow, 119333; Moscow, 123098

N. V. Marchenkov

Shubnikov Institute of Crystallography, Federal Research Center Crystallography and Photonics; National Research Center Kurchatov Institute

Email: ontonic@gmail.com
Russian Federation, Moscow, 119333; Moscow, 123098

V. A. Lomonov

Shubnikov Institute of Crystallography, Federal Research Center Crystallography and Photonics

Email: ontonic@gmail.com
Russian Federation, Moscow, 119333

A. V. Vinogradov

Shubnikov Institute of Crystallography, Federal Research Center Crystallography and Photonics

Email: ontonic@gmail.com
Russian Federation, Moscow, 119333

Yu. V. Pisarevsky

Shubnikov Institute of Crystallography, Federal Research Center Crystallography and Photonics; National Research Center Kurchatov Institute

Email: ontonic@gmail.com
Russian Federation, Moscow, 119333; Moscow, 123098

M. V. Kovalchuk

Shubnikov Institute of Crystallography, Federal Research Center Crystallography and Photonics; National Research Center Kurchatov Institute

Email: ontonic@gmail.com
Russian Federation, Moscow, 119333; Moscow, 123098

Supplementary files

Supplementary Files
Action
1. JATS XML

Copyright (c) 2018 Pleiades Publishing, Inc.