Change in the Sign of the Magnetoresistance and the Two-Dimensional Conductivity of the Layered Quasi-One-Dimensional Semiconductor TiS3
- Authors: Gorlova I.G.1, Pokrovskii V.Y.1, Gavrilkin S.Y.2, Tsvetkov A.Y.2
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Affiliations:
- Kotel’nikov Institute of Radio Engineering and Electronics
- Lebedev Physical Institute
- Issue: Vol 107, No 3 (2018)
- Pages: 175-181
- Section: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/160933
- DOI: https://doi.org/10.1134/S0021364018030074
- ID: 160933
Cite item
Abstract
The dependences of the resistance of the layered quasi-one-dimensional semiconductor TiS3 on the direction and magnitude of the magnetic field B have been measured. The anisotropy and angular dependences of the magnetoresistance indicate the two-dimensional character of the conductivity at T < 100 K. Below T0 ≈ 50 K, the magnetoresistance for the directions of the field in the plane of the layers (ab plane) increases sharply, whereas the transverse magnetoresistance (B ∥ c) becomes negative. The results confirm the possibility of an electron phase transition to a collective state at T0. The negative magnetoresistance (at B ∥ c) below T0 is explained by the magnetic-field-induced suppression of two-dimensional weak localization. The positive magnetoresistance (at B ∥ ab) is explained by the effect of the magnetic field on the spectrum of electronic states.
About the authors
I. G. Gorlova
Kotel’nikov Institute of Radio Engineering and Electronics
Author for correspondence.
Email: gorl@cplire.ru
Russian Federation, Moscow, 125009
V. Ya. Pokrovskii
Kotel’nikov Institute of Radio Engineering and Electronics
Email: gorl@cplire.ru
Russian Federation, Moscow, 125009
S. Yu. Gavrilkin
Lebedev Physical Institute
Email: gorl@cplire.ru
Russian Federation, Moscow, 119991
A. Yu. Tsvetkov
Lebedev Physical Institute
Email: gorl@cplire.ru
Russian Federation, Moscow, 119991
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