Observation of Spin and Valley Splitting of Landau Levels under Magnetic Tunneling in Graphene/Boron Nitride/Graphene Structures
- Authors: Khanin Y.N.1, Gorbachev R.V.2, Kozikov A.2, Wang Y.B.2, Mishchenko A.2, Sklyueva Y.A.2, Makarovsky O.2, Larkin I.A.1, Vdovin E.E.1, Novoselov K.S.2
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Affiliations:
- Institute for Problems of Microelectronics Technologies and High-Purity Materials
- School of Physics and Astronomy
- Issue: Vol 107, No 4 (2018)
- Pages: 238-242
- Section: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/160914
- DOI: https://doi.org/10.1134/S0021364018040069
- ID: 160914
Cite item
Abstract
Resonance magnetic tunneling in heterostructures formed by graphene single sheets separated by a hexagonal boron nitride barrier and bounded by two gates has been investigated in a strong magnetic field, which has allowed observing transitions between spin- and valley-split Landau levels with various indices belonging to different graphene sheets. An unexpected increase with the temperature in the interlayer tunneling conductance owing to transitions between the Landau levels in strong magnetic fields cannot be explained by existing theories.
About the authors
Yu. N. Khanin
Institute for Problems of Microelectronics Technologies and High-Purity Materials
Email: vdov62@yandex.ru
Russian Federation, Chernogolovka, Moscow region, 142432
R. V. Gorbachev
School of Physics and Astronomy
Email: vdov62@yandex.ru
United Kingdom, Manchester, M13 9PL
A. Kozikov
School of Physics and Astronomy
Email: vdov62@yandex.ru
United Kingdom, Manchester, M13 9PL
Yi Bo Wang
School of Physics and Astronomy
Email: vdov62@yandex.ru
United Kingdom, Manchester, M13 9PL
A. Mishchenko
School of Physics and Astronomy
Email: vdov62@yandex.ru
United Kingdom, Manchester, M13 9PL
Yu. A. Sklyueva
School of Physics and Astronomy
Email: vdov62@yandex.ru
United Kingdom, Manchester, M13 9PL
O. Makarovsky
School of Physics and Astronomy
Email: vdov62@yandex.ru
United Kingdom, Nottingham, NG7 2RD
I. A. Larkin
Institute for Problems of Microelectronics Technologies and High-Purity Materials
Email: vdov62@yandex.ru
Russian Federation, Chernogolovka, Moscow region, 142432
E. E. Vdovin
Institute for Problems of Microelectronics Technologies and High-Purity Materials
Author for correspondence.
Email: vdov62@yandex.ru
Russian Federation, Chernogolovka, Moscow region, 142432
K. S. Novoselov
School of Physics and Astronomy
Email: vdov62@yandex.ru
United Kingdom, Manchester, M13 9PL
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