Microstructural properties and evolution of nanoclusters in liquid Si during a rapid cooling process


Cite item

Full Text

Open Access Open Access
Restricted Access Access granted
Restricted Access Subscription Access

Abstract

The formation of amorphous structures in Si during the rapid quenching process was studied based on molecular dynamics simulation by using the Stillinger–Weber potential. The evolution characteristics of nanoclusters during the solidification were analyzed by several structural analysis methods. The amorphous Si has been formed with many tetrahedral clusters and few nanoclusters. During the solidification, tetrahedral polyhedrons affect the local structures by their different positions and connection modes. The main kinds of polyhedrons randomly linked with one another to form an amorphous network structures in the system. The structural evolution of crystal nanocluster demonstrates that the nanocluster has difficulty to growth because of the high cooling rate of 1012 K/s.

About the authors

T. Gao

Guizhou Provincial Key Laboratory of Public Big Data, Institute of New Type Optoelectronic Materials and Technology, College of Big Data and Information Engineering

Author for correspondence.
Email: gaotinghong@sina.com
China, Guiyang, 550025

L. Ren

Guizhou Provincial Key Laboratory of Public Big Data, Institute of New Type Optoelectronic Materials and Technology, College of Big Data and Information Engineering

Email: gaotinghong@sina.com
China, Guiyang, 550025

X. Luo

Guizhou Provincial Key Laboratory of Public Big Data, Institute of New Type Optoelectronic Materials and Technology, College of Big Data and Information Engineering

Email: gaotinghong@sina.com
China, Guiyang, 550025

Y. Liang

Guizhou Provincial Key Laboratory of Public Big Data, Institute of New Type Optoelectronic Materials and Technology, College of Big Data and Information Engineering

Email: gaotinghong@sina.com
China, Guiyang, 550025

Q. Chen

Guizhou Provincial Key Laboratory of Public Big Data, Institute of New Type Optoelectronic Materials and Technology, College of Big Data and Information Engineering

Email: gaotinghong@sina.com
China, Guiyang, 550025

Q. Xie

Guizhou Provincial Key Laboratory of Public Big Data, Institute of New Type Optoelectronic Materials and Technology, College of Big Data and Information Engineering

Email: gaotinghong@sina.com
China, Guiyang, 550025

Z. Tian

Guizhou Provincial Key Laboratory of Public Big Data, Institute of New Type Optoelectronic Materials and Technology, College of Big Data and Information Engineering

Email: gaotinghong@sina.com
China, Guiyang, 550025

Y. Li

Guizhou Provincial Key Laboratory of Public Big Data, Institute of New Type Optoelectronic Materials and Technology, College of Big Data and Information Engineering

Email: gaotinghong@sina.com
China, Guiyang, 550025

X. Hu

Guizhou Provincial Key Laboratory of Public Big Data, Institute of New Type Optoelectronic Materials and Technology, College of Big Data and Information Engineering

Email: gaotinghong@sina.com
China, Guiyang, 550025

J. Luo

Guizhou Provincial Key Laboratory of Public Big Data, Institute of New Type Optoelectronic Materials and Technology, College of Big Data and Information Engineering

Email: gaotinghong@sina.com
China, Guiyang, 550025

Supplementary files

Supplementary Files
Action
1. JATS XML

Copyright (c) 2017 Pleiades Publishing, Inc.