Hall effect in hopping conduction in an ensemble of quantum dots
- Авторлар: Stepina N.P.1, Nenashev A.V.1,2, Dvurechenskii A.V.1,2
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Мекемелер:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- Шығарылым: Том 106, № 5 (2017)
- Беттер: 308-312
- Бөлім: Condensed Matter
- URL: https://journals.rcsi.science/0021-3640/article/view/160544
- DOI: https://doi.org/10.1134/S0021364017170118
- ID: 160544
Дәйексөз келтіру
Аннотация
The Hall effect in heterostructures with a two-dimensional array of tunneling-coupled Ge quantum dots grown by molecular-beam epitaxy on Si is investigated. The conductivity of these structures in zero magnetic field at 4.2 K varies in the range of 10−12−10−4 Ω−1, which includes both the diffusive transport under weak localization conditions and hopping conduction. It is shown that the Hall effect can be discerned against the magnetoresistance-related background in both high- and low-conductivity structures. The Hall coefficient in the hopping regime exhibits a nonmonotonic dependence on the occupancy of quantum dots by holes. This behavior correlates with that of the localization length of the hole wavefunctions.
Авторлар туралы
N. Stepina
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Хат алмасуға жауапты Автор.
Email: stepina@isp.nsc.ru
Ресей, Novosibirsk, 630090
A. Nenashev
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: stepina@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
A. Dvurechenskii
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University
Email: stepina@isp.nsc.ru
Ресей, Novosibirsk, 630090; Novosibirsk, 630090
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