Terahertz Photoconductivity in Hg 1− x  Cd  x  Te near the transition from the direct to inverted spectrum

A. V. Galeeva; A. I. Artamkin; N. N. Mikhailov; S. A. Dvoretskii; S. N. Danilov; L. I. Ryabova; D. R. Khokhlov

doi:10.1134/S0021364017150061

Terahertz Photoconductivity in Hg_1−xCd_xTe near the transition from the direct to inverted spectrum

Authors: Galeeva A.V.¹, Artamkin A.I.¹, Mikhailov N.N.², Dvoretskii S.A.², Danilov S.N.³, Ryabova L.I.⁴, Khokhlov D.R.¹^,5
Affiliations:
1. Faculty of Physics
2. Rzhanov Institute of Semiconductor Physics, Siberian Branch
3. University of Regensburg
4. Faculty of Chemistry
5. Lebedev Physical Institute
Issue: Vol 106, No 3 (2017)
Pages: 162-166
Section: Condensed Matter
URL: https://journals.rcsi.science/0021-3640/article/view/160473
DOI: https://doi.org/10.1134/S0021364017150061
ID: 160473

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Abstract

For the Hg_1−xCd_xTe-based structures, it is shown that the transition from the direct to invertеd spectrum is accompanied by the sign change for the signals related to the terahertz photoconductivity and to the magnetophotogalvanic effect. Within the range of chemical compositions corresponding to the inverted spectrum, the photoconductivity kinetics exhibits specific features, which can result from the surface topological states.