Effect of edge vacancies on localized states in a semi-infinite zigzag graphene sheet


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The effect of vacancies on the robustness of zero-energy edge electronic states in zigzag-type graphene layer is studied at different concentrations and distributions of defects. All calculations are performed by using the Green’s function method and the tight-binding approximation. It is found that the arrangement of defects plays a crucial role in the destruction of the edge states. We have specified a critical distance between edge vacancies when their mutual influence becomes significant and affects markedly the density of electronic states at graphene edge.

作者简介

A. Glebov

Bogoliubov Laboratory of Theoretical Physics; Moscow Institute of Physics and Technology

编辑信件的主要联系方式.
Email: glebov.atth@gmail.com
俄罗斯联邦, Dubna, Moscow region, 141980; Dolgoprudnyi, Moscow region, 141700

V. Katkov

Bogoliubov Laboratory of Theoretical Physics

Email: glebov.atth@gmail.com
俄罗斯联邦, Dubna, Moscow region, 141980

V. Osipov

Bogoliubov Laboratory of Theoretical Physics

Email: glebov.atth@gmail.com
俄罗斯联邦, Dubna, Moscow region, 141980

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