Low-temperature contribution to the resonant tunneling conductance of a disordered N–I–N junction
- Авторы: Kirpichenkov V.Y.1, Kirpichenkova N.V.1, Lozin O.I.1, Postnikov A.A.1
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Учреждения:
- South-Russia State Polytechnic University
- Выпуск: Том 104, № 7 (2016)
- Страницы: 500-503
- Раздел: Miscellaneous
- URL: https://journals.rcsi.science/0021-3640/article/view/159807
- DOI: https://doi.org/10.1134/S002136401619005X
- ID: 159807
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Аннотация
A formula for the contribution ΔGres(T) to the resonant tunneling conductance of the N–I–N junction (where N is a normal metal and I is an insulator) with a weak (low impurity concentrations) structural disorder in the I layer from the low-temperature “smearing” electron Fermi surfaces in its N shores is obtained. It is shown that the temperature dependence ΔGres(T) in such a “dirty” junction qualitatively differs from the corresponding dependence ΔG0(T) in a “pure” (without resonant impurities in the I layer) junction: ΔGres(T) < 0, d(ΔGres)/dT < 0; ΔG0(T) > 0, d(ΔG0)/dT > 0, which can serve as an experimental test of the presence of impurity tunneling resonances in the disordered I layer.
Об авторах
V. Kirpichenkov
South-Russia State Polytechnic University
Автор, ответственный за переписку.
Email: wkirpich@rambler.ru
Россия, Novocherkassk, 346428
N. Kirpichenkova
South-Russia State Polytechnic University
Email: wkirpich@rambler.ru
Россия, Novocherkassk, 346428
O. Lozin
South-Russia State Polytechnic University
Email: wkirpich@rambler.ru
Россия, Novocherkassk, 346428
A. Postnikov
South-Russia State Polytechnic University
Email: wkirpich@rambler.ru
Россия, Novocherkassk, 346428
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